SBOS030C August   2000  – March 2024 BUF634

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: TO-220 and TO-263 Packages
    6. 6.6 Electrical Characteristics: Wide-Bandwidth Mode for SOIC Package
    7. 6.7 Electrical Characteristics: Low-Quiescent-Current Mode for SOIC Package
    8. 6.8 Typical Characteristics: TO-220 and TO-263 Packages
    9. 6.9 Typical Characteristics: SOIC Package
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Output Current
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 High Frequency Applications
    2. 8.2 Typical Application
      1. 8.2.1 Boosting Op Amp Output Current
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 Power Dissipation
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
        1. 9.1.1.1 TINA-TI™ Simulation Software (Free Download)
        2. 9.1.1.2 TI Reference Designs
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
  • KTT|5
  • KC|5
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.6 Electrical Characteristics: Wide-Bandwidth Mode for SOIC Package

at TA = 25°C, VS = ±15 V, BW pin connected to V–, and RL = 100 Ω connected to mid-supply (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
AC PERFORMANCE
BW Bandwidth, –3 dB RL = 1 kΩ 210 MHz
RL = 100 Ω 200
Bandwidth for 0.1-dB flatness VO = 10 mVPP, RL = 100 Ω, RS = 50 Ω 50 MHz
SR Slew rate VO = 20-V step, VIN-SR = 4000 V/µs 3750 V/µs
Rise and fall time VO = 200-mV step 1.3 ns
Settling time to 0.1% VO = 20-V step, VIN-SR = 2500 V/µs 90 ns
Settling time to 1% VO = 20-V step, VIN-SR = 2500 V/µs 20 ns
en Voltage noise f = 1 kHz 3.4 nV/√Hz
in Current noise f = 100 kHz 0.85 pA/√Hz
HD2 2nd-harmonic distortion VO = 2 VPP, f = 20 kHz –77 dBc
VO = 10 VPP, f = 20 kHz –69
HD3 3rd-harmonic distortion VO = 2 VPP, f = 20 kHz –77 dBc
VO = 10 VPP, f = 20 kHz –56
DC PERFORMANCE
VOS Input offset voltage TA = 25℃ 36 65 mV
Input offset voltage drift(1) TA = –40℃ to 125℃ 175 µV/℃
IB Input bias current VIN = 0 V 0.25 2 µA
G Gain VO = ±10 V, RL = 1 kΩ 0.95 0.99 V/V
VO = ±10 V, RL = 100 Ω 0.93 0.95
VO = ±10 V, RL = 67 Ω 0.91 0.93
INPUT
Linear input voltage range RL = 1 kΩ, IB < 10 µA –13 13 V
ZIN Input impedance RL = 100 Ω 180 || 5 MΩ || pF
OUTPUT
Output headroom to supplies IO = ±10 mA 1.6 1.8 V
IO = ±100 mA 2.0 2.2
IO = ±150 mA 2.2 2.5
IO Current output, continuous ±250 mA
ISC Short-circuit current ±375 ±550 mA
ZO Output impedance DC, IO = 10 mA 5 Ω
POWER SUPPLY
VS Operating voltage range ±2.25 ±18 V
IQ Quiescent current IO = 0 mA 8.5 12 mA
PSRR Power-supply rejection ratio VS = ±2.25 V to ±18 V 64 75 dB
THERMAL SHUTDOWN
Thermal shutdown temperature 180 ℃
(1) Based on electrical characterization over temperature of 35 devices.