SLPS387C January 2016 – November 2023 CSD17552Q3A
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-source voltage | VGS = 0 V, ID = 250 μA | 30 | V | |||
IDSS | Drain-to-source leakage current | VGS = 0 V, VDS = 24 V | 1 | μA | |||
IGSS | Gate-to-source leakage current | VDS = 0 V, VGS = 20 V | 100 | nA | |||
VGS(th) | Gate-to-source threshold voltage | VDS = VGS, ID = 250 μA | 1.1 | 1.5 | 1.9 | V | |
RDS(on) | Drain-to-source on resistance | VGS = 4.5 V, ID = 11 A | 6.5 | 8.1 | mΩ | ||
VGS = 10 V, ID = 11 A | 5.5 | 6.0 | mΩ | ||||
gfs | Transconductance | VDS = 15 V, ID = 11 A | 106 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
Ciss | Input capacitance | VGS = 0 V, VDS = 15 V, ƒ = 1 MHz | 1580 | 2050 | pF | ||
Coss | Output capacitance | 385 | 500 | pF | |||
Crss | Reverse transfer capacitance | 28 | 36 | pF | |||
RG | Series gate resistance | .9 | 1.8 | Ω | |||
Qg | Gate charge total (4.5 V) | VDS = 15 V, ID = 11 A | 9 | 12 | nC | ||
Qgd | Gate charge gate to drain | 2.3 | nC | ||||
Qgs | Gate charge gate to source | 3.6 | nC | ||||
Qg(th) | Gate charge at Vth | 1.8 | nC | ||||
Qoss | Output charge | VDS = 15 V, VGS = 0 V | 11 | nC | |||
td(on) | Turn on delay time | VDS = 15 V, VGS = 4.5 V, IDS = 11 A, RG = 2 Ω | 7.2 | ns | |||
tr | Rise time | 7.4 | ns | ||||
td(off) | Turn off delay time | 11.0 | ns | ||||
tf | Fall time | 3.4 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode forward voltage | ISD = 11 A, VGS = 0 V | 0.8 | 1 | V | ||
Qrr | Reverse recovery charge | VDS= 13.5 V, IF = 11 A, di/dt = 300 A/μs | 17 | nC | |||
trr | Reverse recovery time | 15 | ns |