SLPS449F October   2013  – January 2022 CSD25483F4

PRODUCTION DATA  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical Data
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 CSD25483F4 Embossed Carrier Tape Dimensions

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YJC|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

This 210-mΩ, 20-V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Typical Device Dimensions

Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-source voltage –20 V
Qg Gate charge total (–4.5 V) 959 pC
Qgd Gate charge gate-to-drain 161 pC
RDS(on) Drain-to-source on-resistance VGS = –1.8 V 530 mΩ
VGS = –2.5 V 338 mΩ
VGS = –4.5 V 210 mΩ
VGS(th) Threshold voltage –0.95 V

Ordering Information(1)
DEVICEQTYMEDIAPACKAGESHIP
CSD25483F430007-Inch ReelFemto (0402)
1.0-mm × 0.6-mm
Land Grid Array (LGA)		Tape and Reel
CSD25483F4T250
(1) For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings
TA = 25°C VALUE UNIT
VDS Drain-to-source voltage –20 V
VGS Gate-to-source voltage –12 V
ID Continuous drain current(1) –1.6 A
IDM Pulsed drain current(2) –6.5 A
IG Continuous gate clamp current –35 mA
Pulsed gate clamp current(2) –350
PD Power dissipation(1) 500 mW
V(ESD) Human body model (HBM) 4 kV
Charged device model (CDM) 2 kV
TJ,
Tstg		 Operating junction and
storage temperature range		 –55 to 150 °C
(1) Typical RθJA = 85°C/W on 1-inch2 (6.45 cm2), 2-oz.
(0.071 mm thick) Cu pad on a 0.06-inch (1.52 mm) thick FR4 PCB.
(2) Pulse duration ≤ 300 μs, duty cycle ≤ 2%
Top View