SNOS412Q February   2000  – January 2023 LM1117

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 LM1117 Electrical Characteristics
    6. 7.6 LM1117I Electrical Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Load Regulation
    4. 8.4 Device Functional Modes
      1. 8.4.1 Protection Diodes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 External Capacitors
          1. 9.2.2.1.1 Input Bypass Capacitor
          2. 9.2.2.1.2 Adjust Terminal Bypass Capacitor
          3. 9.2.2.1.3 Output Capacitor
      3. 9.2.3 Application Curve
    3. 9.3 System Examples
    4. 9.4 Power Supply Recommendations
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
        1. 9.5.1.1 Heat Sink Requirements
      2. 9.5.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.4 Thermal Information

THERMAL METRIC(1)LM1117, LM1117IUNIT
DCY
(SOT-223)		NDE
(TO-220)		NDP
(TO-252)		NGN
(WSON)		KTT
(TO-263)
4 PINS3 PINS3 PINS8 PINS3 PINS
RθJAJunction-to-ambient thermal resistance61.623.845.139.341.3°C/W
RθJC(top)Junction-to-case (top) thermal resistance42.516.652.131.444.1°C/W
RθJBJunction-to-board thermal resistance10.45.329.816.524.2°C/W
ψJTJunction-to-top characterization parameter2.93.14.50.310.9°C/W
ψJBJunction-to-board characterization parameter10.35.329.416.723.2°C/W
RθJC(bot)Junction-to-case (bottom) thermal resistance—1.51.35.61.3°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC package thermal metrics application report.