SNVS676I August   2010  – April  2018 LM5119

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
    1.     Device Images
      1.      Simplified Application Circuit
  4. Revision History
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  High Voltage Start-Up Regulator
      2. 7.3.2  UVLO
      3. 7.3.3  Enable 2
      4. 7.3.4  Oscillator and Sync Capability
      5. 7.3.5  Error Amplifiers and PWM Comparators
      6. 7.3.6  Ramp Generator
      7. 7.3.7  Current Limit
      8. 7.3.8  Hiccup Mode Current Limiting
      9. 7.3.9  Soft Start
      10. 7.3.10 HO and LO Output Drivers
      11. 7.3.11 Maximum Duty Cycle
      12. 7.3.12 Thermal Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 Diode Emulation
  8. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Miscellaneous Functions
      2. 8.1.2 Interleaved Two-Phase Operation
      3. 8.1.3 Interleaved 4-Phase Operation
    2. 8.2 Typical Applications
      1. 8.2.1 Dual-output Design Example
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1  Timing Resistor
          2. 8.2.1.2.2  Output Inductor
          3. 8.2.1.2.3  Current Sense Resistor
          4. 8.2.1.2.4  Ramp Resistor and Ramp Capacitor
          5. 8.2.1.2.5  Output Capacitors
          6. 8.2.1.2.6  Input Capacitors
          7. 8.2.1.2.7  VCC Capacitor
          8. 8.2.1.2.8  Bootstrap Capacitor
          9. 8.2.1.2.9  Soft-Start Capacitor
          10. 8.2.1.2.10 Restart Capacitor
          11. 8.2.1.2.11 Output Voltage Divider
          12. 8.2.1.2.12 UVLO Divider
            1. 8.2.1.2.12.1 MOSFET Selection
          13. 8.2.1.2.13 MOSFET Snubber
          14. 8.2.1.2.14 Error Amplifier Compensation
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Two-Phase Design Example
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Switching Jitter Root Causes and Solutions
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

HO and LO Output Drivers

The LM5119 contains a high current, high-side driver and associated high voltage level shift to drive the buck switch of each regulator channel. This gate driver circuit works in conjunction with an external diode and bootstrap capacitor. A 0.1-µF or larger ceramic capacitor, connected with short traces between the HB pin and SW pin, is recommended. During the OFF-time of the high-side MOSFET, the SW pin voltage is approximately 0 V and the bootstrap capacitor charges from VCC through the external bootstrap diode. When operating with a high PWM duty cycle, the buck switch is forced off each cycle for 320 ns to ensure that the bootstrap capacitor is recharged.

The LO and HO outputs are controlled with an adaptive dead-time methodology which insures that both outputs are never enabled at the same time. When the controller commands HO to be enabled, the adaptive dead-time logic first disables LO and waits for the LO voltage to drop. HO is then enabled after a small delay. Similarly, the LO turnon is disabled until the HO voltage has discharged. This methodology insures adequate dead-time for any size MOSFET.

Exercise care when selecting an output MOSFET with the appropriate threshold voltage, especially if VCC is supplied from the regulator output. During start-up at low input voltages the MOSFET threshold must be lower than the 4.9-V VCC undervoltage lockout threshold. Otherwise, there may be insufficient VCC voltage to completely turn on the MOSFET as VCC undervoltage lockout is released during start-up. If the buck switch MOSFET gate drive is not sufficient, the regulator may not start or it may hang up momentarily in a high power dissipation state. This condition can be avoided by selecting a MOSFET with a lower threshold voltage or if VCC is supplied from an external source higher than the output voltage. If the minimum input voltage programmed by the UVLO pin resistor divider is above the VCC regulation level, this precaution is of no concern.