SBOS877A April   2018  – September 2018 THS6301

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      MTPR G.Fast 212 MHz (Bias 10, PAR = 15 dB, 1-in-64 Missing Tones)
      2.      Multitone Power Ratio (MTPR) Profile (G.Fast, 212 MHz, 8 dBm)
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
    5. 7.5 Programming
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Power Dissipation and Thermal Considerations
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.4 Thermal Information

THERMAL METRIC(1) THS6301 UNIT
RSA (VQFN)
16 PINS
RθJA Junction-to-ambient thermal resistance 39 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 38.8 °C/W
RθJB Junction-to-board thermal resistance 18 °C/W
ΨJT Junction-to-top characterization parameter 1 °C/W
ΨJB Junction-to-board characterization parameter 17.9 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 7.7 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.