JAJS232E November   2006  – October 2019 TPS2410 , TPS2411

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      代表的なアプリケーションの図
  4. 4 改訂履歴
  5. 5 概要（続き）
  6. 6 Device Comparison
  7. 7 Pin Configuration and Functions
    1.     Pin Functions, PW
    2.     Pin Functions, RMS
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics: TPS2410, 11
    6. 8.6 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Device Pins
        1. 9.3.1.1  A, C:
        2. 9.3.1.2  BYP:
        3. 9.3.1.3  FLTR:
        4. 9.3.1.4  FLTB:
        5. 9.3.1.5  GATE:
        6. 9.3.1.6  GND:
        7. 9.3.1.7  RSET:
        8. 9.3.1.8  RSVD:
        9. 9.3.1.9  STAT
        10. 9.3.1.10 UV, OV, PG:
        11. 9.3.1.11 VDD:
      2. 9.3.2 Gate Drive, Charge Pump and C(BYP)
      3. 9.3.3 Fast Comparator Input Filtering – C(FLTR)
      4. 9.3.4 UV, OV, and PG
      5. 9.3.5 Input ORing and Stat
    4. 9.4 Device Functional Modes
      1. 9.4.1 TPS2410 vs TPS2411 – MOSFET Control Methods
  10. 10Application and Implementation
    1. 10.1 Typical Connections
      1. 10.1.1 N+1 Power Supply
      2. 10.1.2 Input ORing
    2. 10.2 Typical Application Examples
      1. 10.2.1 VDD, BYP, and Powering Options
      2. 10.2.2 Bidirectional Blocking and Protection of C
      3. 10.2.3 ORing Examples
      4. 10.2.4 Design Requirements
        1. 10.2.4.1 MOSFET Selection and R(RSET)
        2. 10.2.4.2 TPS2410 Regulation-loop Stability
      5. 10.2.5 Detailed Design Procedure
      6. 10.2.6 Application Curves
  11. 11Power Supply Recommendations
    1. 11.1 Recommended Operating Range
    2. 11.2 System Design and Behavior with Transients
  12. 12Layout
    1. 12.1 Layout Considerations
    2. 12.2 Layout Example
  13. 13デバイスおよびドキュメントのサポート
    1. 13.1 デバイス・サポート
    2. 13.2 関連リンク
    3. 13.3 ドキュメントの更新通知を受け取る方法
    4. 13.4 コミュニティ・リソース
    5. 13.5 商標
    6. 13.6 静電気放電に関する注意事項
    7. 13.7 Glossary
  14. 14メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ

9.3.1.1 A, C:

The A pin serves as the simulated diode anode and the C as the cathode. GATE is driven high when V(AC) exceeds 10 mV. Both devices provide a strong GATE pull-down when V(AC) is less than the programmable fast turn-off threshold. The TPS2410 has a soft pull-down when V(AC) is less than 10 mV but above the fast turn-off threshold.

Several internal comparator and amplifier circuits monitor these two pins. The inputs are protected from excess differential voltage by a clamp diode and series resistance. If C falls below A by more than about 0.7 V, a small current flows out of A. Protect the internal circuits with an external clamp if C can be more than 6 V lower than A. A small signal clamp diode and 1-kΩ resistor, or circuit per Figure 13 are suitable.

The internal charge pump output, which provides bias power to the comparators and voltage to drive GATE, is referenced to A. Some charge pump current appears on A due to this topology. The A and C pins should be Kelvin connected to the MOSFET source and drain. A and C connections should also be short and low impedance, with special attention to the A connection. Residual noise from the charge pump can be reduced with a bypass capacitor at A if the application permits.