JAJSOG3 December   2023 UCC28750

PRODUCTION DATA  

  1.   1
  2. 特長
  3. アプリケーション
  4. 概要
  5. Device Comparison
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Timing Requirements
    8. 6.8 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Detailed Pin Descriptions
      1. 7.3.1 VDD - Input Bias
      2. 7.3.2 DRV - Gate Drive Out
      3. 7.3.3 CS - Current Sensing
      4. 7.3.4 FB - Feedback
      5. 7.3.5 FLT - Fault
      6. 7.3.6 GND - Ground Return
    4. 7.4 Feature Description
      1. 7.4.1 Soft Start
      2. 7.4.2 Control Law
      3. 7.4.3 Frequency Dithering
      4. 7.4.4 Fault Protections
        1. 7.4.4.1 VDD Overvoltage and Undervoltage Lockout
        2. 7.4.4.2 Internal Overtemperature Protection
        3. 7.4.4.3 Output Overpower Protection
        4. 7.4.4.4 Output Short-Circuit Protection
        5. 7.4.4.5 FLT Pin Protections
      5. 7.4.5 Slope Compensation
    5. 7.5 Device Functional Modes
      1. 7.5.1 Off
      2. 7.5.2 Startup
      3. 7.5.3 On
      4. 7.5.4 Fault
      5. 7.5.5 Disabled
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Application
      2. 8.2.2 Design Requirements
      3. 8.2.3 Detailed Design Procedure
        1. 8.2.3.1 Input Bulk Capacitance with Minimum Bulk Voltage
        2. 8.2.3.2 Transformer Turns Ratio and Inductance
        3. 8.2.3.3 Current Sense and Slope Compensation Network
        4. 8.2.3.4 Output Capacitors
        5. 8.2.3.5 VDD Capacitance, CVDD
      4. 8.2.4 Application Performance Plots
        1. 8.2.4.1 Startup
        2. 8.2.4.2 Load Transients
        3. 8.2.4.3 Q1 Drain Voltage Evaluation
      5. 8.2.5 What to Do and What Not to Do
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 ドキュメントの更新通知を受け取る方法
    3. 9.3 サポート・リソース
    4. 9.4 Trademarks
    5. 9.5 静電気放電に関する注意事項
    6. 9.6 用語集
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

What to Do and What Not to Do

Do

  • Use multiple resistors for the high voltage startup resistor network
  • Limit the current into the FLT pin, as the pin can only handle 5mA
  • Use multiple resistors for the current sensing resistor if designing for higher power designs (such as 60W)
  • Use high frequency bypass capacitors close to the transformer in addition to the bulk capacitors
  • Place the slope compensation resistor close to the UCC28750 device, not the current sensing resistor
  • Use an additional current sensing filter capacitor to aid the leading edge blanking with noise filtering
  • Place a resistor in series with the DRV pin to the gate of the MOSFET to tune the turn-on and turn-off rate of the MOSFET
    • To increase turn off speed, use a separate diode and resistor path for the turn-off edge to have a faster turn-off edge and a slower turn-on edge
GUID-20231124-SS0I-VPQL-NXG9-NHGCP4LRJ29Z-low.svg Figure 8-18 DRV gate drive resistor network setup
Do not
  • Use small traces for the power path, use large traces, greater than 40mil (1mm)
    • A trace can carry about 0.5A to 1A per 10mil (0.254mm) trace thickness
  • Put high voltage traces next to low voltage traces, use a high voltage spacing rule and set a restriction in layout
  • Arbitrarily place grounding points, have a particular power path ground loop and a separate signal ground loop, tied together near the power stage input bulk capacitor