JAJSO02D September   2005  – November 2023 XTR117

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings #GUID-A1BA2296-600A-4764-BBF1-62E55FF362E3/GUID-7F491310-4E37-4E2F-922E-35EFD7CCE84F
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Reverse-Voltage Protection
      2. 6.3.2 Overvoltage Surge Protection
      3. 6.3.3 VSON Package
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 External Transistor
      2. 7.1.2 Minimum Output Current
      3. 7.1.3 Offsetting the Input
      4. 7.1.4 Radio Frequency Interference
      5. 7.1.5 Maximum Output Current
      6. 7.1.6 Circuit Stability
    2. 7.2 Typical Application
    3. 7.3 Layout
      1. 7.3.1 Layout Guidelines
  9. 8 Device and Documentation Support
    1. 8.1 Related Documentation
    2. 8.2 ドキュメントの更新通知を受け取る方法
    3. 8.3 サポート・リソース
    4. 8.4 Trademarks
    5. 8.5 静電気放電に関する注意事項
    6. 8.6 用語集
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • DGK|8
  • DRB|8
サーマルパッド・メカニカル・データ
発注情報

5.5 Electrical Characteristics

at TA = 25°C, V+ = 24 V, RIN = 20 kΩ, and TIP29C external transistor (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OUTPUT
IO Output current equation IO = IIN × 100
Output current, linear range 0.20 25 mA
ILIM Overscale limit 32 mA
IMIN Underscale limit IREG = 0 0.13 0.20 mA
SPAN
S Span (current gain) 100 A/A
Error(1) IO = 200 µA to 25 mA ±0.05 ±0.4 %
IO = 200 µA to 25 mA,
TA = –40 °C to +125°C		 ±3 ±20 ppm/°C
Nonlinearity IO = 200 µA to 25 mA ±0.003 ±0.02 %
INPUT
VOS Offset voltage (op amp) IIN = 40 µA ±100 ±500 µV
IIN = 40 µA,
TA = –40 °C to +125°C		 ±0.7 ±6 µV/°C
IIN = 40 µA,
V+ = 7.5 V to 36 V		 0.1 2 µV/V
IB Bias current –35 nA
TA = –40 °C to +125°C 300 pA/°C
θn Noise 0.1 Hz to 10 Hz 0.6 µVpp
DYNAMIC RESPONSE
Small-signal bandwidth CLOOP = 0, RL = 0 380 kHz
Slew rate 3.2 mA/µs
VREG(2)
Voltage 5 V
Voltage accuracy IREG = 0 mA ±0.05

±0.1

 V
IREG = 0 mA,
TA = –40 °C to +125°C		 ±0.1 mV/°C
IREG = 0 mA,
V+ = 7.5 V to 36 V		 1 mV/V
Voltage accuracy vs VREG current See Figure 5-4
Short-circuit current 12 mA
POWER SUPPLY
IQ Quiescent current 130 200 µA
TA = –40 °C to +125°C 250
(1) Does not include initial error or temperature coefficient of RIN.
(2) Voltage measured with respect to IRET pin.