SLUUCT5 October   2023

 

  1.   1
  2.   Description
  3.   Get Started
  4.   Features
  5.   Applications
  6.   6
  7. 1Evaluation Module Overview
    1. 1.1 Introduction
    2. 1.2 Kit Contents
    3. 1.3 Specification
    4. 1.4 Device Information
  8. 2Hardware
    1. 2.1 Additional Images
    2. 2.2 Hardware Description
      1. 2.2.1 I/O Description
  9. 3Implementation Results
    1. 3.1 Electrical Specifications
    2. 3.2 Test Summary
      1. 3.2.1 Definitions
      2. 3.2.2 Equipment
        1. 3.2.2.1 Power Supply
        2. 3.2.2.2 Function Generator
        3. 3.2.2.3 DMM
        4. 3.2.2.4 Oscilloscope
      3. 3.2.3 Equipment Setup
        1. 3.2.3.1 DC Power Supply Settings
        2. 3.2.3.2 Digital Multi-Meter Settings
        3. 3.2.3.3 Two-Channel Function Generator Settings
        4. 3.2.3.4 29
        5. 3.2.3.5 Oscilloscope Settings
        6. 3.2.3.6 Bench Setup Diagram
    3. 3.3 Power Up and Power Down Procedure
      1. 3.3.1 Power Up
      2. 3.3.2 Power Down
    4. 3.4 Typical Performance Waveforms (CL = 1800 pF)
      1. 3.4.1 Propagation Delays
  10. 4Hardware Design Files
    1. 4.1 Schematic
    2. 4.2 PCB Layouts
    3. 4.3 Bill of Materials
  11. 5Additional Information
    1.     Trademarks

1.4 Device Information

The UCC27332-Q1 is a 20-V, single channel low-side driver with 9-A peak source and 9-A peak sink current for driving Si FET's, IGBTs and GaN FETs. The UCC27332-Q1 has low propagation delays and fast rise (13 ns) and fall (9 ns) times driving a 10 nF load for reliable timing of the gate drive signals. The high drive strength can effectively drive high Qg MOSFET loads in a variety of end equipment applications. The wide operating voltage range of 4.5V to 18 V allows for driving power devices including GaN FET's, Si FET's and IGBT's.