SLVK126C january   2023  – august 2023 TPS7H1111-SP

PRODUCTION DATA  

  1.   1
  2.   TPS7H1111-SP Total Ionizing Dose (TID)
  3.   Trademarks
  4. 1Device Information
    1. 1.1 Product Description
    2. 1.2 Device Details
  5. 2Total Dose Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Facility
    3. 2.3 Test Setup Details
    4. 2.4 Test Configuration and Condition
  6. 3TID Characterization Test Results
    1. 3.1 TID Characterization Summary Results
    2. 3.2 Data Sheet Electrical Parameters and Associated Tests
  7. 4Applicable and Reference Documents
    1. 4.1 Applicable Documents
    2. 4.2 Reference Documents
  8. 5Revision History
  9.   A Appendix A: HDR TID Report Data
  10.   B Appendix B: LDR TID Report Data

1.2 Device Details

Table 1-1 lists the device information and test conditions used in the TID HDR and LDR characterization.

Table 1-1 Device and Exposure Details
TID HDR and LDR Details
TI DeviceTPS7H1111-SP
TI Part Name5962R2120301VXC
Device FunctionLow Dropout Linear Regulator
Package14-pin CFP (HBL)
TechnologyLBC7 (Linear BiCMOS 7)
Assembly Lot Number2014109
Quantity Tested

HDR:

  • 5 units biased and 5 units unbiased at 3krad(Si)
  • 5 units biased and 5 units unbiased at 10krad(Si)
  • 5 units biased and 5 units unbiased at 30krad(Si)
  • 5 units biased and 5 units unbiased at 50krad(Si)
  • 5 units biased and 5 units unbiased at 50krad(Si)
  • 5 correlation units

LDR:

  • 6 units biased and 6 units unbiased at 3krad(Si)
  • 6 units biased and 6 units unbiased at 10krad(Si)
  • 6 units biased and 6 units unbiased at 30krad(Si)
  • 6 units biased and 6 units unbiased at 50krad(Si)
  • 6 units biased and 6 units unbiased at 100krad(Si)
  • 2 correlation units
HDR Dose Rate50-300-rad(Si)/s ionizing radiation with increments
(1)
HDR Radiation FacilityTexas Instruments Dallas, Texas
LDR Dose Rate10mrad(Si)/s ionizing radiation with increments
LDR Radiation FacilityRadiation Test Solutions Colorado Springs, Colorado
Irradiation and Test TemperatureAmbient, room temperature controlled to 25°C ±6°C per MIL-STD-883 and MIL-STD-750.
GUID-20230426-SS0I-N7F2-7SGR-RPNP5JTL7WZH-low.jpg Figure 1-1 TPS7H1111-SP Device (Front)
GUID-20230426-SS0I-JJF4-C3RG-HKRJWH199SJL-low.jpg Figure 1-2 TPS7H1111-SP Device (Back)
1. 100krad biased and unbiased devices were annealed for 1 week at room temperature with their respective bias conditions resulting in an effective dose rate of 165mrad(Si)/s.