SLVUCH7A september   2022  – june 2023 TPS25990

 

  1.   1
  2.   TPS25990EVM: Evaluation Module for TPS25990 eFuse
  3.   Trademarks
  4. 1Introduction
    1. 1.1 EVM Features
    2. 1.2 EVM Applications
  5. 2Description
  6. 3Schematic
  7. 4General Configurations
    1. 4.1 Physical Access
    2. 4.2 Test Equipment and Setup
      1. 4.2.1 Power supplies
      2. 4.2.2 Meters
      3. 4.2.3 Oscilloscope
      4. 4.2.4 USB-to-GPIO Interface Adapter
      5. 4.2.5 Loads
  8. 5Test Setup and Procedures
    1. 5.1  Hot Plug
    2. 5.2  Start-up with Enable
    3. 5.3  Current Limit Based Start-up Behavior
    4. 5.4  Power Up into Short
    5. 5.5  Overvoltage Lockout
    6. 5.6  Transient Overload Performance
    7. 5.7  Overcurrent Event
    8. 5.8  Provision to Apply Load Transient and Overcurrent Event Using an Onboard Switching Circuit
    9. 5.9  Output Hot Short
    10. 5.10 Quick Output Discharge (QOD)
    11. 5.11 Thermal Performance of TPS25990EVM
  9. 6Using the TPS25990EVM-GUI
    1. 6.1 Access the TPS25990EVM-GUI
    2. 6.2 Introduction to the TPS25990EVM-GUI
    3. 6.3 Establishing Communication Between the EVM and GUI
    4. 6.4 Quick Info
    5. 6.5 Configuration
    6. 6.6 Telemetry
    7. 6.7 Blackbox
    8. 6.8 Register Map Page
  10. 7EVAL Board Assembly Drawings and Layout Guidelines
    1. 7.1 PCB Drawings
  11. 8Bill Of Materials (BOM)
  12. 9Revision History

Description

The TPS25990EVM enables the evaluation of TPS25990 eFuse by communicating with the TPS25990EVM-GUI using the USB-TO-GPIO2 USB interface adapter evaluation module. This EVM has one TPS25990 eFuse (Primary device) and one TPS25985 eFuse (Secondary device) connected in parallel to evaluate the performance of a 110-A Hot Swap design.

The input power is applied across the connectors T1 and T3, while T2 and T3 provide the output connection for the EVM; refer to the schematic in Figure 3-1 and EVM test setup in Figure 5-1. TVS diodes D2 and D3 protect the input from transient overvoltages. Schottky diodes D1 and D5 protect the output by clamping the negative voltage excursion at the OUT pins of TPS25990 and TPS25985 eFuses within their minimum absolute ratings.

SW1 allows to do power cycle and SW2 enables the quick output discharge (QOD). Power Good (PG) and fault (FLTb & FLTb2) indicators are provided by LED DG1, DR1, and DR2 respectively. SW3 allows to apply a custom load transient using on-board MOSFETs, gate drive circuit, and load resistors.

Table 2-1 TPS25990EVM eFuse Evaluation Board Options and Settings
ParametersOptions and Settings
VIN UVLO Threshold5 V
VIN OVLO Threshold16.7 V in hardware and configurable through PMBus in the range of 3 V to 17.7 V with a default value of 16.7 V (0x0Eh in VIN_OV_FLT (55h) register)
Overcurrent Blanking Timer Duration (tTIMER)Set at 2.18 ms (0x14h in OC_TIMER (E6h) register) by default and configurable through PMBus in the range of 0 ms to 27.8 ms with a step of 109 µs
Output Voltage Slew Rate (dv/dt)Selectable in hardware - 1.2 V/ms, 1.8 V/ms, and 12 V/ms and configurable through PMBus in the range of 50 % to 150 % of nominal slew-rate (Set by hardware) with a default value of 100 % (10b in the 10:9 bits of DEVICE_CONFIG (E4h) register)
Circuit-breaker Threshold (IOCP)Selectable in hardware - 110 A and 70 A with VIREF of 1 V
Inrush Current Limit and Active Current Sharing Threshold for TPS25990 eFuse (U1)Selectable in hardware - 25 A and 19 A of inrush current limit and 40 A and 30 A of active current sharing threshold with VIREF of 1 V
Inrush Current Limit and Active Current Sharing Threshold for TPS25985 eFuse (U2)Selectable in hardware - 38 A and 32 A of inrush current limit and 60 A and 50 A of active current sharing threshold with VIREF of 1 V
Reference Voltage for Overcurrent Protection and Active Current Sharing (VIREF)Configurable through PMBus in the range of 0.3 V to 1.2 V with a default value of 1 V (0x32h in VIREF (E0h) register)
PMBus Address of TPS25990 eFuse

0x46h (7 bit format) with both ADDR0 and ADDR1 pins are connected to GND