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Drivers de compuerta aislados

UCC21710-Q1

ACTIVO

Controlador de puerta aislada monocanal de 10 A y 5.7 kVrms con protección contra sobrecorrientes pa

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UCC21710-Q1

ACTIVO
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Detalles del producto

Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000, 8400 Power switch IGBT, SiCFET Peak output current (A) 10 Features Active miller clamp, Fault reporting, Integrated analog to PWM sensor, Power good, Short circuit protection, Soft turn-off Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 13 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 TI functional safety category Functional Safety Quality-Managed Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12
Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000, 8400 Power switch IGBT, SiCFET Peak output current (A) 10 Features Active miller clamp, Fault reporting, Integrated analog to PWM sensor, Power good, Short circuit protection, Soft turn-off Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 13 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 TI functional safety category Functional Safety Quality-Managed Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12
SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • 5.7-kV RMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 0: -40°C to +150°C ambient operating temperature range
    • Device HBM ESD classification level 3A
    • Device CDM ESD classification level C6
  • SiC MOSFETs and IGBTs up to 2121V pk
  • 33-V maximum output drive voltage (VDD-VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 270ns response time fast overcurrent protection
  • 4-A internal active miller clamp
  • 400mA soft turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject <40ns noise transient and pulse on input pins
  • 12V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C
  • Safety-related certifications:
    • Reinforced insulation per DIN EN IEC 60747-17(VDE 0884-17)
    • UL 1577 component recognition program
  • 5.7-kV RMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 0: -40°C to +150°C ambient operating temperature range
    • Device HBM ESD classification level 3A
    • Device CDM ESD classification level C6
  • SiC MOSFETs and IGBTs up to 2121V pk
  • 33-V maximum output drive voltage (VDD-VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 270ns response time fast overcurrent protection
  • 4-A internal active miller clamp
  • 400mA soft turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject <40ns noise transient and pulse on input pins
  • 12V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C
  • Safety-related certifications:
    • Reinforced insulation per DIN EN IEC 60747-17(VDE 0884-17)
    • UL 1577 component recognition program

The UCC21710-Q1 is a galvanic isolated single channel gate driver designed for up to 1700-V SiC MOSFETs and IGBTs with advanced protection features, best-in-class dynamic performance and robustness. UCC21710-Q1 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO 2 capacitive isolation technology, supporting up to 1.5-kV RMS working voltage, 12.8-kV PK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and >150V/ns common mode noise immunity (CMTI).

The UCC21710 -Q1 includes the state-of-the-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.

The UCC21710-Q1 is a galvanic isolated single channel gate driver designed for up to 1700-V SiC MOSFETs and IGBTs with advanced protection features, best-in-class dynamic performance and robustness. UCC21710-Q1 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO 2 capacitive isolation technology, supporting up to 1.5-kV RMS working voltage, 12.8-kV PK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and >150V/ns common mode noise immunity (CMTI).

The UCC21710 -Q1 includes the state-of-the-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.
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El manual de seguridad UCC21710-Q1 y el informe de tasa de ajuste de seguridad están disponibles. Solicitar ahora

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Documentación técnica

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* Data sheet UCC21710-Q1 10-A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI datasheet (Rev. C) PDF | HTML 05 may 2023
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. S) 29 feb 2024
White paper Addressing High-Volt Design Challenges w/ Reliable and Affordable Isolation Tech (Rev. C) PDF | HTML 26 sep 2023
Application brief Understanding the Short Circuit Protection for Silicon Carbide MOSFETs (Rev. C) PDF | HTML 08 sep 2023
User guide UCC217xx and ISO5x5x Half-Bridge EVM User's Guide for Wolfspeed 1200-V SiC 01 sep 2023
Certificate UCC217xx/-Q1 CQC Certificate of Product Certification 07 jun 2023
Application note HEV/EV Traction Inverter Design Guide Using Isolated IGBT and SiC Gate Drivers (Rev. B) PDF | HTML 21 oct 2022
Certificate UCC21710QDWEVM-054 EU RoHS Declaration of Conformity (DoC) 24 ago 2022
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 16 dic 2021
E-book E-book: An engineer’s guide to industrial robot designs 12 feb 2020
Application note Performance of the Analog PWM Channel in Smart Gate Drivers 16 ene 2020
Design guide SiC/IGBT Isolated Gate Driver Reference Design With Thermal Diode and Sensing 18 dic 2019
User guide UCC217xx Family Driving and Protecting SiC and IGBT Power Modules and Transistor (Rev. B) 09 sep 2019
Technical article Eight questions about monitoring and protection in hybrid and electric vehicles PDF | HTML 22 may 2019
Application brief Why is high UVLO important for safe IGBT & SiC MOSFET power switch operation 30 ene 2019

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

UCC21710QDWEVM-025 — Placa de evaluación de conducción y protección para transistores y módulos de potencia SiC e IGBT

The UCC21710QDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, protection and diagnostic needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. This TI EVM is based on 5.7-kVrms reinforced isolation (...)
Guía del usuario: PDF
No disponible en TI.com
Modelo de simulación

UCC21710 PSpice Transient Model

SLUM679.ZIP (89 KB) - PSpice Model
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Modelo de simulación

UCC21710 Unencrypted PSpice Transient Model

SLUM716.ZIP (6 KB) - PSpice Model
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Modelo de simulación

UCC21732QDWRQ1 PSPICE Model

SLUM723.ZIP (6 KB) - PSpice Model
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Herramienta de cálculo

SLUC695 — UCC217xx XL Calculator Tool

Productos y hardware compatibles

Productos y hardware compatibles

Productos
Drivers de compuerta aislados
UCC21710-Q1 — Controlador de puerta aislada monocanal de 10 A y 5.7 kVrms con protección contra sobrecorrientes pa UCC21732-Q1 — Controlador de puerta aislada monocanal de ±10 A y 5.7 kVrms con apagado de dos niveles para IGBT/Si UCC21736-Q1 — Controlador de puerta aislada monocanal de ±10 A y 5.7 kVrms con cortocircuito activo para IGBT/SiC UCC21739-Q1 — Controlador de puerta aislada monocanal de ±10 A y 3 kVrms con detección analógica aislada para IGBT UCC21750 — Controlador de puerta aislada monocanal de ±10 A y 5.7 kVrms con DESATURACIÓN y pinza Miller interna UCC21750-Q1 — Controlador de puerta aislada monocanal de ±10 A y 5.7 kVrms con DESATURACIÓN y pinza interna para I UCC21759-Q1 — Controlador de puerta aislada monocanal de ±10 A y 3.0 kVrms con DESATURACIÓN y pinza interna para I
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Esquema

UCC21710QDWEVM-054 Schematic Files

SLURB29.ZIP (323 KB)
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Herramienta de simulación

PSPICE-FOR-TI — PSpice® para herramienta de diseño y simulación de TI

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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Diseños de referencia

PMP23223 — Controlador de compuerta aislado inteligente con diseño de referencia de alimentación de polarizació

Este diseño de referencia demuestra la combinación del controlador de compuerta UCC21732 con una alimentación de polarización de la serie UCC14xxx. Este diseño se puede utilizar para accionar diversos interruptores de potencia, incluida la conexión directa a un módulo de transistor de efecto de (...)
Test report: PDF
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SOIC (DW) 16 Ver opciones
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Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

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