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Drivers de compuerta aislados

UCC21755-Q1

ACTIVO

Controlador de compuerta de canal único aislado ±10 A para automoción con protección activa y detecc

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UCC21755-Q1

ACTIVO
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Detalles del producto

Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, SiCFET Peak output current (A) 10 Features Active miller clamp, Disable, Enable, Fault reporting, High CMTI, Integrated analog to PWM sensor, Power good, Soft turn-off, Split output Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 13 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 TI functional safety category Functional Safety Quality-Managed Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12
Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, SiCFET Peak output current (A) 10 Features Active miller clamp, Disable, Enable, Fault reporting, High CMTI, Integrated analog to PWM sensor, Power good, Soft turn-off, Split output Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 13 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 TI functional safety category Functional Safety Quality-Managed Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12
SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • 5.7-kVRMS single-channel isolated gate driver
  • AEC-Q100 Qualified with the following results:
    • Device temperature grade 0: -40°C to +150°C ambient operating temperature range
    • Device HBM ESD classification level 3A
    • Device CDM ESD classification level C6
  • Functional Safety Quality-Managed
  • SiC MOSFETs and IGBTs up to 2121 Vpk
  • 33-V maximum output drive voltage (VDD-VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 200-ns response time fast DESAT protection with 5-V threshold
  • 4-A internal active Miller clamp
  • 400-mA soft turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC, or thermal diode
    • High voltage DC-link or phase voltage
  • Alarm FLT on overcurrent and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject <40-ns noise transient and pulse on input pins
  • 12-V VDD UVLO with power good on RDY
  • Inputs/outputs with over- or under-shoot transient voltage immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C
  • 5.7-kVRMS single-channel isolated gate driver
  • AEC-Q100 Qualified with the following results:
    • Device temperature grade 0: -40°C to +150°C ambient operating temperature range
    • Device HBM ESD classification level 3A
    • Device CDM ESD classification level C6
  • Functional Safety Quality-Managed
  • SiC MOSFETs and IGBTs up to 2121 Vpk
  • 33-V maximum output drive voltage (VDD-VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 200-ns response time fast DESAT protection with 5-V threshold
  • 4-A internal active Miller clamp
  • 400-mA soft turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC, or thermal diode
    • High voltage DC-link or phase voltage
  • Alarm FLT on overcurrent and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject <40-ns noise transient and pulse on input pins
  • 12-V VDD UVLO with power good on RDY
  • Inputs/outputs with over- or under-shoot transient voltage immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C

The UCC21755-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance, and robustness. UCC21755-Q1 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40-years isolation barrier life, as well as providing low part-to-part skew , and >150-V/ns common mode noise immunity (CMTI).

The UCC21755-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.

The UCC21755-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance, and robustness. UCC21755-Q1 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40-years isolation barrier life, as well as providing low part-to-part skew , and >150-V/ns common mode noise immunity (CMTI).

The UCC21755-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.
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El manual de seguridad funcional UCC21755-Q1 y los informes FIT Rate y Pin FMA de seguridad funcional están disponibles. Solicitar ahora

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UCC21756-Q1 ACTIVO Automotive, ±10-A  isolated single-channel gate driver with active protection and iso 5-V DESAT version enables faster short-circuit protection for SiC FETs, which is critical to prevent SiC FET destruction

Documentación técnica

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* Data sheet UCC21755-Q1 Automotive 10-A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI datasheet PDF | HTML 27 sep 2022
Certificate UCC217xx/-Q1 CQC Certificate of Product Certification 07 jun 2023

Diseño y desarrollo

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Placa de evaluación

UCC21750QDWEVM-025 — Placa de evaluación de conducción y protección para transistores y módulos de potencia SiC e IGBT

The UCC21750QDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, desat feature based protection and diagnostic needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. This TI EVM is based on 5.7-kVrms (...)
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Herramienta de simulación

PSPICE-FOR-TI — PSpice® para herramienta de diseño y simulación de TI

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
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  • Lugar de fabricación
  • Lugar de ensamblaje

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