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UCC5880-Q1

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Controlador de compuerta IGBT/SiC MOSFET de resistencia variable en tiempo real, aislado, de 20 A pa

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UCC5880-Q1

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Detalles del producto

Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 1414 Transient isolation voltage (VIOTM) (VPK) 7071 Power switch IGBT, SiCFET Peak output current (A) 20 Features Active miller clamp, Disable, Enable, Fault reporting, High CMTI, Power good, Programmable dead time, Real-time variable gate drive strength, Short circuit protection, Soft turn-off, Two-level turn-off Output VCC/VDD (max) (V) 30 Output VCC/VDD (min) (V) 12 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 TI functional safety category Functional Safety-Compliant Propagation delay time (µs) 0.15 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 1414 Rise time (ns) 55 Fall time (ns) 55 Undervoltage lockout (typ) (V) Programmable
Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 1414 Transient isolation voltage (VIOTM) (VPK) 7071 Power switch IGBT, SiCFET Peak output current (A) 20 Features Active miller clamp, Disable, Enable, Fault reporting, High CMTI, Power good, Programmable dead time, Real-time variable gate drive strength, Short circuit protection, Soft turn-off, Two-level turn-off Output VCC/VDD (max) (V) 30 Output VCC/VDD (min) (V) 12 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 TI functional safety category Functional Safety-Compliant Propagation delay time (µs) 0.15 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 1414 Rise time (ns) 55 Fall time (ns) 55 Undervoltage lockout (typ) (V) Programmable
SSOP (DFC) 32 106.09 mm² 10.3 x 10.3
  • Dual-output driver with real time variable drive strength
    • ±15A and ±5A drive current outputs
    • Digital input pins (GD*) for drive strength adjustment without SPI
    • 3 resistor settings R1, R2, or R1||R2
    • Integrated 4A active Miller clamp or optional external drive for Miller clamp transistor
  • Primary-side and secondary-side active short circuit (ASC) support
  • Under-voltage and over-voltage protection on internal and external supplies
  • Driver die temperature sensing and over temperature protection
  • Short-circuit protection:
    • 110ns response time to DESAT event
    • DESAT protection – selections up to 14V
    • Shunt resistor based short-circuit (SC) and over-current (OC) protection
    • Configurable protection threshold values and blanking times
    • Programmable soft turn-off (STO) and two-level soft turn-off (2STO) current
  • Integrated 10-bit ADC
    • Able to measure power switch temperature, DC Link voltage, driver die temperature, DESAT pin voltage, VCC2 voltage
    • Programmable digital comparators
  • Advanced VCE/VDS clamping circuit
  • Functional Safety-Compliant
  • Integrated diagnostics:
    • Built in self-test (BIST) for protection comparators
    • Gate threshold voltage measurement for power device health monitoring
    • INP to transistor gate path integrity
    • Internal clock monitoring
    • Fault alarm and warning outputs (nFLT*)
    • ISO communication data integrity check
  • SPI based device reconfiguration, verification, supervision, and diagnosis
  • 150V/ns CMTI
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C2b
  • Dual-output driver with real time variable drive strength
    • ±15A and ±5A drive current outputs
    • Digital input pins (GD*) for drive strength adjustment without SPI
    • 3 resistor settings R1, R2, or R1||R2
    • Integrated 4A active Miller clamp or optional external drive for Miller clamp transistor
  • Primary-side and secondary-side active short circuit (ASC) support
  • Under-voltage and over-voltage protection on internal and external supplies
  • Driver die temperature sensing and over temperature protection
  • Short-circuit protection:
    • 110ns response time to DESAT event
    • DESAT protection – selections up to 14V
    • Shunt resistor based short-circuit (SC) and over-current (OC) protection
    • Configurable protection threshold values and blanking times
    • Programmable soft turn-off (STO) and two-level soft turn-off (2STO) current
  • Integrated 10-bit ADC
    • Able to measure power switch temperature, DC Link voltage, driver die temperature, DESAT pin voltage, VCC2 voltage
    • Programmable digital comparators
  • Advanced VCE/VDS clamping circuit
  • Functional Safety-Compliant
  • Integrated diagnostics:
    • Built in self-test (BIST) for protection comparators
    • Gate threshold voltage measurement for power device health monitoring
    • INP to transistor gate path integrity
    • Internal clock monitoring
    • Fault alarm and warning outputs (nFLT*)
    • ISO communication data integrity check
  • SPI based device reconfiguration, verification, supervision, and diagnosis
  • 150V/ns CMTI
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C2b

The UCC5880-Q1 device is an isolated, highly configurable adjustable drive strength gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections are included, such as shunt resistor based over-current, over-temperature (PTC, NTC, or diode), and DESAT detection, with selectable soft turn-off or two-level soft turn-off during these faults. An integrated 10-bit ADC enables monitoring of up to 2 analog inputs, VCC2, DESAT, and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL compliant systems. The parameters and thresholds for these features are configurable using the SPI, which allows the device to be used with nearly any SiC MOSFET or IGBT.

The UCC5880-Q1 device is an isolated, highly configurable adjustable drive strength gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections are included, such as shunt resistor based over-current, over-temperature (PTC, NTC, or diode), and DESAT detection, with selectable soft turn-off or two-level soft turn-off during these faults. An integrated 10-bit ADC enables monitoring of up to 2 analog inputs, VCC2, DESAT, and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL compliant systems. The parameters and thresholds for these features are configurable using the SPI, which allows the device to be used with nearly any SiC MOSFET or IGBT.
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Documentación técnica

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Tipo Título Fecha
* Data sheet UCC5880-Q1 Isolated 20A Adjustable Gate Drive IGBT/SiC MOSFET Gate Driver With Advanced Protection Features For Automotive Applications datasheet (Rev. A) PDF | HTML 26 feb 2024
Technical article Three key components needed to boost performance of next generation EV traction inverters PDF | HTML 05 ene 2024
Technical article How to maximize SiC traction inverter efficiency with real-time variable gate drive strength PDF | HTML 04 ene 2024
White paper Simplifying Power Conversion in High-Voltage Systems PDF | HTML 09 nov 2023
Certificate UCC5880INVERTEREVM EU RoHS Declaration of Conformity (DoC) 13 mar 2023
White paper Design Priorities in EV Traction Inverter With Optimum Performance (Rev. A) PDF | HTML 08 feb 2023
Technical article Improving safety in EV traction inverter systems PDF | HTML 08 dic 2022
Certificate UCC5880QEVM-057 EU RoHS Declaration of Conformity (DoC) 11 nov 2022
White paper Traction Inverters – A Driving Force Behind Vehicle Electrification PDF | HTML 08 sep 2022
Technical article Reducing power loss and thermal dissipation in SiC traction inverters PDF | HTML 10 jun 2022

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

UCC5880INVERTEREVM — Módulo de evaluación UCC5880-Q1 para accionamiento de puerta aislado variable en inversores de tr

La placa UCC5880INVERTEREVM se puede utilizar de forma independiente para probar el controlador UCC5880-Q1 con una carga de condensador de 100 nF soldada en la placa, o también se puede utilizar para controlar directamente módulos de alimentación de medio puente Wolfspeed XM3 basados en SiC para (...)

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Placa de evaluación

UCC5880QEVM-057 — Módulo de evaluación UCC5880-Q1

El módulo de evaluación UCC5880-Q1 está diseñado para la evaluación del UCC5880-Q1, un controlador de compuerta de un solo canal aislado de 20 A con fuerza de accionamiento de compuerta ajustable y funciones de protección avanzadas. Este controlador de compuerta está diseñado para impulsar MOSFET e (...)
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Herramienta de simulación

PSPICE-FOR-TI — PSpice® para herramienta de diseño y simulación de TI

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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Diseños de referencia

TIDM-02014 — Diseño de referencia de inversor de tracción SiC de alta potencia y alto rendimiento automotriz

El TIDM-02014 es un diseño de referencia de sistema de inversor de tracción basado en SiC de 800 V y 300 kW desarrollado por Texas Instruments y Wolfspeed que proporciona una base para que los fabricantes de equipos originales y los ingenieros de diseño creen (...)
Design guide: PDF
Diseños de referencia

PMP31236 — Gate driver reference design for HybridPACK™ Drive IGBT modules

This reference uses six UCC5880-Q1 gate-drive ICs and six LM5180-Q1 isolated bias supplies to interface with and drive Infineon HybridPACK™ insulated-gate bipolar transistor (IGBT) modules. The isolated output voltage is +15 V and −8 V with 100-mA maximum output current each. The input voltage (...)
Test report: PDF
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SSOP (DFC) 32 Ver opciones
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Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

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