CSD95379Q3M
- 92.5% System Efficiency at 12 A
- Ultra-Low Power Loss of 1.8 W at 12 A
- Max Rated Continuous Current of 20 A and Peak Current of 45 A
- High-Frequency Operation (up to 2 MHz)
- High-Density SON 3.3-mm × 3.3-mm Footprint
- Ultra-Low Inductance Package
- System Optimized PCB Footprint
- Low Quiescent (LQ) and Ultra-Low Quiescent (ULQ) Current Mode
- 3.3-V and 5-V PWM Signal Compatible
- Diode Emulation Mode with FCCM
- Tri-State PWM Input
- Integrated Bootstrap Diode
- Shoot-Through Protection
- RoHS Compliant – Lead-Free Terminal Plating
- Halogen Free
The CSD95379Q3M NexFET™ power stage is a highly optimized design for use in high-power, high-density synchronous buck converters. This product integrates the driver IC and NexFET technology to complete the power stage switching function. The driver IC has a built-in selectable diode emulation function that enables DCM operation to improve light load efficiency. In addition, the driver IC supports ULQ mode that enables Connected Standby for Windows® 8. With the PWM input in tri-state, quiescent current is reduced to 130 µA, with immediate response. When SKIP# is held at tri-state, the current is reduced to 8 µA (typically 20 µs is required to resume switching). This combination produces high-current, high-efficiency, and high-speed switching capability in a small 3.3-mm × 3.3-mm outline package. In addition, the PCB footprint has been optimized to help reduce design time and simplify the completion of the overall system design.
技術文件
| 類型 | 標題 | 日期 | ||
|---|---|---|---|---|
| * | Data sheet | CSD95379Q3M Synchronous Buck NexFET Power Stage datasheet (Rev. D) | PDF | HTML | 2016年 12月 30日 |
| Technical article | How to create a power supply for Intel’s Braswell processor | PDF | HTML | 2015年 8月 10日 |
設計與開發
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PMP22510 — 切換式電容器整合式降壓 (SCIB) 電源轉換器參考設計
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訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 資格摘要
- 進行中可靠性監測
- 晶圓廠位置
- 組裝地點