LM5110
- Independently Drives Two N-Channel MOSFETs
- Compound CMOS and Bipolar Outputs Reduce Output Current Variation
- 5A sink/3A Source Current Capability
- Two Channels can be Connected in Parallel to Double the Drive Current
- Independent Inputs (TTL Compatible)
- Fast Propagation Times (25-ns Typical)
- Fast Rise and Fall Times (14-ns/12-ns Rise/Fall With 2-nF Load)
- Dedicated Input Ground Pin (IN_REF) for Split Supply or Single Supply Operation
- Outputs Swing from VCC to VEE Which Can Be Negative Relative to Input Ground
- Available in Dual Noninverting, Dual Inverting and Combination Configurations
- Shutdown Input Provides Low Power Mode
- Supply Rail Undervoltage Lockout Protection
- Pin-Out Compatible With Industry Standard Gate Drivers
- Packages:
- SOIC-8
- WSON-10 (4 mm × 4 mm)
The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCC to the output ground VEE which can be negative with respect to IN_REF. Undervoltage lockout protection and a shutdown input pin are also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 and the thermally-enhanced WSON-10 packages.
技術文件
| 類型 | 標題 | 日期 | ||
|---|---|---|---|---|
| * | Data sheet | LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability datasheet (Rev. B) | PDF | HTML | 2012年 11月 5日 |
| Application note | Why use a Gate Drive Transformer? | PDF | HTML | 2024年 3月 4日 | |
| Application brief | External Gate Resistor Selection Guide (Rev. A) | 2020年 2月 28日 | ||
| Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 2020年 2月 28日 | ||
| More literature | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018年 10月 29日 | ||
| Selection guide | Power Management Guide 2018 (Rev. R) | 2018年 6月 25日 |
設計與開發
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UCC27423-4-5-Q1EVM — 具有啟用功能的 UCC2742xQ1 雙路 4A 高速低壓側 MOSFET 驅動器評估模組
PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具
| 封裝 | 引腳 | 下載 |
|---|---|---|
| SOIC (D) | 8 | 檢視選項 |
| WSON (DPR) | 10 | 檢視選項 |
訂購與品質
- RoHS
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- 產品標記
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- MTBF/FIT 估算值
- 材料內容
- 資格摘要
- 進行中可靠性監測
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