LM5112
- LM5112-Q1 is Qualified for Automotive Applications
- AEC-Q100 Grade 1 Qualified
- Manufactured on an Automotive Grade Flow
- Compound CMOS and Bipolar Outputs Reduce Output Current Variation
- 7-A Sink and 3-A Source Current
- Fast Propagation Times: 25 ns (Typical)
- Fast Rise and Fall Times: 14 ns or 12 ns
Rise or Fall With 2-nF Load - Inverting and Non-Inverting Inputs Provide Either Configuration With a Single Device
- Supply Rail Undervoltage Lockout Protection
- Dedicated Input Ground (IN_REF) for
Split Supply or Single Supply Operation - Power Enhanced 6-Pin WSON Package
(3 mm × 3 mm) or Thermally Enhanced
MSOP-PowerPAD Package - Output Swings From VCC to VEE Which Are Negative Relative to Input Ground
The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turnon voltage. The LM5112 device provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
技術文件
| 類型 | 標題 | 日期 | ||
|---|---|---|---|---|
| * | Data sheet | LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver datasheet (Rev. C) | PDF | HTML | 2015年 10月 22日 |
| Application brief | External Gate Resistor Selection Guide (Rev. A) | 2020年 2月 28日 | ||
| Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 2020年 2月 28日 | ||
| More literature | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018年 10月 29日 | ||
| Selection guide | Power Management Guide 2018 (Rev. R) | 2018年 6月 25日 | ||
| Application note | An Alternative Approach to Higher-Power Boost Converters | 2009年 11月 30日 |
設計與開發
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UCC27423-4-5-Q1EVM — 具有啟用功能的 UCC2742xQ1 雙路 4A 高速低壓側 MOSFET 驅動器評估模組
PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具
| 封裝 | 引腳 | 下載 |
|---|---|---|
| HVSSOP (DGN) | 8 | 檢視選項 |
| WSON (NGG) | 6 | 檢視選項 |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 資格摘要
- 進行中可靠性監測
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。