UCC27614

現行

具有 4-V UVLO、30-V VDD 與低傳播延遲的 10-A/10-A 單通道閘極驅動器

產品詳細資料

Number of channels 1 Power switch IGBT, MOSFET Peak output current (A) 10 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 26 Features Enable pin, UVLO Operating temperature range (°C) -40 to 150 Rise time (ns) 5 Fall time (ns) 4 Propagation delay time (µs) 0.017 Input threshold CMOS, TTL Channel input logic CMOS, TTL Input negative voltage (V) -10 Rating Catalog Undervoltage lockout (typ) (V) 4 Driver configuration Single
Number of channels 1 Power switch IGBT, MOSFET Peak output current (A) 10 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 26 Features Enable pin, UVLO Operating temperature range (°C) -40 to 150 Rise time (ns) 5 Fall time (ns) 4 Propagation delay time (µs) 0.017 Input threshold CMOS, TTL Channel input logic CMOS, TTL Input negative voltage (V) -10 Rating Catalog Undervoltage lockout (typ) (V) 4 Driver configuration Single
SOIC (D) 8 29.4 mm² 4.9 x 6 WSON (DSG) 8 4 mm² 2 x 2
  • Typical 10-A sink 10-A source output currents
  • Input and enable pins capable of withstanding up to –10 V
  • Absolute maximum VDD voltage: 30 V
  • Wide VDD operating range from 4.5 V to 26 V with UVLO
  • Available in 2-mm x 2-mm SON8 package
  • Typical 17.5-ns propagation delay
  • EN (enable) pin in SOIC8 package
  • IN– pin can be used for enable/disable functionality
  • VDD independent input thresholds (TTL compatible)
  • Can be used as inverting or non-inverting driver
  • Operating junction temperature range of –40°C to 150°C
  • Typical 10-A sink 10-A source output currents
  • Input and enable pins capable of withstanding up to –10 V
  • Absolute maximum VDD voltage: 30 V
  • Wide VDD operating range from 4.5 V to 26 V with UVLO
  • Available in 2-mm x 2-mm SON8 package
  • Typical 17.5-ns propagation delay
  • EN (enable) pin in SOIC8 package
  • IN– pin can be used for enable/disable functionality
  • VDD independent input thresholds (TTL compatible)
  • Can be used as inverting or non-inverting driver
  • Operating junction temperature range of –40°C to 150°C

The UCC27614 is a single channel, high-speed, low-side gate driver capable of effectively driving MOSFET, IGBT, SiC, and GaN power switches. UCC27614 has a typical peak drive strength of 10 A, which reduces the rise and fall times of the power switches, lowering switching losses and increasing efficiency. The UCC27614 device’s small propagation delay yields better power stage efficiency by improving the dead-time optimization, pulse width utilization, control loop response, and transient performance of the system.

UCC27614 can handle –10-V on its inputs, which improves robustness in systems with moderate ground bouncing. The inputs are independent of supply voltage and can be connected to most controller outputs for maximum control flexibility. An independent enable signal allows the power stage to be controlled independent of the main control logic. The gate driver can quickly shut off the power stage if there is a fault in the system (which requires the power train to be turned-off). The enable function also improves system robustness. Many high-frequency switching power supplies exhibit high frequency noise at the gate of the power device, which can get injected into the output pin of the gate driver and can cause the driver to malfunction. The UCC27614 performs well in such conditions due to its transient reverse current and reverse voltage capability.

The strong internal pulldown MOSFET holds the output low if the VDD voltage is below the specified UVLO threshold. This active pulldown feature further improves system robustness. The UCC27614 device’s 10-A drive current in the 2-mm × 2mm package improves system power density. This small package also enables optimum gate driver placement and improved layout.

The UCC27614 is a single channel, high-speed, low-side gate driver capable of effectively driving MOSFET, IGBT, SiC, and GaN power switches. UCC27614 has a typical peak drive strength of 10 A, which reduces the rise and fall times of the power switches, lowering switching losses and increasing efficiency. The UCC27614 device’s small propagation delay yields better power stage efficiency by improving the dead-time optimization, pulse width utilization, control loop response, and transient performance of the system.

UCC27614 can handle –10-V on its inputs, which improves robustness in systems with moderate ground bouncing. The inputs are independent of supply voltage and can be connected to most controller outputs for maximum control flexibility. An independent enable signal allows the power stage to be controlled independent of the main control logic. The gate driver can quickly shut off the power stage if there is a fault in the system (which requires the power train to be turned-off). The enable function also improves system robustness. Many high-frequency switching power supplies exhibit high frequency noise at the gate of the power device, which can get injected into the output pin of the gate driver and can cause the driver to malfunction. The UCC27614 performs well in such conditions due to its transient reverse current and reverse voltage capability.

The strong internal pulldown MOSFET holds the output low if the VDD voltage is below the specified UVLO threshold. This active pulldown feature further improves system robustness. The UCC27614 device’s 10-A drive current in the 2-mm × 2mm package improves system power density. This small package also enables optimum gate driver placement and improved layout.

下載 觀看有字幕稿的影片 影片

技術文件

star =TI 所選的此產品重要文件
找不到結果。請清除您的搜尋條件,然後再試一次。
檢視所有 5
類型 標題 日期
* Data sheet UCC27614 30-V, 10-A Single Channel Low Side Gate Driver with –10-V Input Capability datasheet (Rev. C) PDF | HTML 2022年 1月 21日
Application note Selecting Gate Drivers for HVAC Systems PDF | HTML 2024年 4月 4日
Technical article Managing power-supply noise with a 30-V gate driver PDF | HTML 2021年 12月 7日
Application note Benefits of a Compact, Powerful, and Robust Low-Side Gate Driver PDF | HTML 2021年 11月 10日
EVM User's guide Using the UCC27614EVM PDF | HTML 2021年 6月 13日

設計與開發

如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

UCC27614EVM — 適用於單通道 30-V、10-A 高速低壓側閘極驅動器的 UCC27614 評估模組

UCC27614 評估模組 (EVM) 專為評估 TI 的 30-V、10-A 單通道 2 × 2 閘極驅動器而設計。此 EVM 的目標是依產品規格書參數評估驅動器 IC。驅動器 IC 可針對各種電容與電阻負載進行評估。EVM 可以設定為反相或非反相配置。EVM 具備評估 TO-220 體積功率電晶體的佈建。

使用指南: PDF | HTML
TI.com 無法提供
模擬型號

UCC27614 SIMPLIS Model

SLUM794.ZIP (74 KB) - SIMPLIS Model
模擬型號

UCC27614 Unencrypted PSpice Model

SLUM885.ZIP (18 KB) - PSpice Model
計算工具

SLURB20 UCC27614 Schematic Review Template

支援產品和硬體

支援產品和硬體

產品
低壓側驅動器
UCC27614 具有 4-V UVLO、30-V VDD 與低傳播延遲的 10-A/10-A 單通道閘極驅動器
模擬工具

PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
參考設計

PMP23126 — 3-kW 全橋相移式轉換器搭配主動箝位參考設計,可提供 > 270-W/in3 的功率密度

此參考設計是專為最高功率密度設計的 GaN 式 3-kW 全橋相移式轉換器 (PSFB)。此設計具主動箝位可減少二次側同步整流器 MOSFET 的電壓應力,以使用具更出色品質因數 (FoM) 的低電壓額定值 MOSFET。PMP23126 使用我們的一次側 30mΩ GaN 和二次側矽 MOSFET。與矽 MOSFET 相比,具整合式驅動器與保護的 LMG3522 頂端冷卻 GaN 可在更大的操作範圍中維持 ZVS,以實現更高效率。PSFB 可在 100 kHz 運作,並可達 97.74% 峰值效率。
Test report: PDF
封裝 引腳 下載
SOIC (D) 8 檢視選項
WSON (DSG) 8 檢視選項

訂購與品質

內含資訊:
  • RoHS
  • REACH
  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 資格摘要
  • 進行中可靠性監測
內含資訊:
  • 晶圓廠位置
  • 組裝地點

建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。

支援與培訓

內含 TI 工程師技術支援的 TI E2E™ 論壇

內容係由 TI 和社群貢獻者依「現狀」提供,且不構成 TI 規範。檢視使用條款

若有關於品質、封裝或訂購 TI 產品的問題,請參閱 TI 支援。​​​​​​​​​​​​​​

影片