產品詳細資料

Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 7 Rail-to-rail In to V+ GBW (typ) (MHz) 6.4 Slew rate (typ) (V/µs) 10 Vos (offset voltage at 25°C) (max) (mV) 3 Iq per channel (typ) (mA) 0.29 Vn at 1 kHz (typ) (nV√Hz) 40 Rating Catalog Operating temperature range (°C) to Offset drift (typ) (µV/°C) 6 Features Decompensated Input bias current (max) (pA) 60 CMRR (typ) (dB) 90 Iout (typ) (A) 0.05 Architecture FET Input common mode headroom (to negative supply) (typ) (V) 3 Input common mode headroom (to positive supply) (typ) (V) 1 Output swing headroom (to negative supply) (typ) (V) 0.3 Output swing headroom (to positive supply) (typ) (V) -0.3
Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 7 Rail-to-rail In to V+ GBW (typ) (MHz) 6.4 Slew rate (typ) (V/µs) 10 Vos (offset voltage at 25°C) (max) (mV) 3 Iq per channel (typ) (mA) 0.29 Vn at 1 kHz (typ) (nV√Hz) 40 Rating Catalog Operating temperature range (°C) to Offset drift (typ) (µV/°C) 6 Features Decompensated Input bias current (max) (pA) 60 CMRR (typ) (dB) 90 Iout (typ) (A) 0.05 Architecture FET Input common mode headroom (to negative supply) (typ) (V) 3 Input common mode headroom (to positive supply) (typ) (V) 1 Output swing headroom (to negative supply) (typ) (V) 0.3 Output swing headroom (to positive supply) (typ) (V) -0.3
SOIC (D) 8 29.4 mm² 4.9 x 6
  • Excellent Output Drive Capability
    VO = ± 2.5 V Min at RL = 100 ,
    VCC± = ± 5 V
    VO = ± 12.5 V Min at RL = 600 ,
    VCC± = ± 15 V
  • Low Supply Current...280 uA Typ
  • Decompensated for High Slew Rate and
    Gain-Bandwidth Product
    AVD = 0.5 Min
    Slew Rate = 10 V/us Typ
    Gain-Bandwidth Product = 6.5 MHz Typ
  • Wide Operating Supply Voltage Range
    VCC ± = ± 3.5 V to ± 18 V
  • High Open-Loop Gain...280 V/mV Typ
  • Low Offset Voltage...500 uV Max
  • Low Offset Voltage Drift With Time
    0.04 uV/Month Typ
  • Low Input Bias Current...5 pA Typ

TLE2161, TLE2161A, TLE2161B
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE
u POWER OPERATIONAL AMPLIFIERS



SLOS049D - NOVEMBER 1989 - REVISED MAY 1996


  • Excellent Output Drive Capability
    VO = ± 2.5 V Min at RL = 100 ,
    VCC± = ± 5 V
    VO = ± 12.5 V Min at RL = 600 ,
    VCC± = ± 15 V
  • Low Supply Current...280 uA Typ
  • Decompensated for High Slew Rate and
    Gain-Bandwidth Product
    AVD = 0.5 Min
    Slew Rate = 10 V/us Typ
    Gain-Bandwidth Product = 6.5 MHz Typ
  • Wide Operating Supply Voltage Range
    VCC ± = ± 3.5 V to ± 18 V
  • High Open-Loop Gain...280 V/mV Typ
  • Low Offset Voltage...500 uV Max
  • Low Offset Voltage Drift With Time
    0.04 uV/Month Typ
  • Low Input Bias Current...5 pA Typ

TLE2161, TLE2161A, TLE2161B
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE
u POWER OPERATIONAL AMPLIFIERS



SLOS049D - NOVEMBER 1989 - REVISED MAY 1996


The TLE2161, TLE2161A, and TLE2161B are JFET-input, low-power, precision operational amplifiers manufactured using the Texas Instruments Excalibur process. Decompensated for stability with a minimum closed-loop gain of 5, these devices combine outstanding output drive capability with low power consumption, excellent dc precision, and high gain-bandwidth product.

In addition to maintaining the traditional JFET advantages of fast slew rates and low input bias and offset currents, the Excalibur process offers outstanding parametric stability over time and temperature. This results in a device that remains precise even with changes in temperature and over years of use.

The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).

A variety of available options includes small-outline packages and chip-carrier versions for high-density system applications.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C.

The TLE2161, TLE2161A, and TLE2161B are JFET-input, low-power, precision operational amplifiers manufactured using the Texas Instruments Excalibur process. Decompensated for stability with a minimum closed-loop gain of 5, these devices combine outstanding output drive capability with low power consumption, excellent dc precision, and high gain-bandwidth product.

In addition to maintaining the traditional JFET advantages of fast slew rates and low input bias and offset currents, the Excalibur process offers outstanding parametric stability over time and temperature. This results in a device that remains precise even with changes in temperature and over years of use.

The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).

A variety of available options includes small-outline packages and chip-carrier versions for high-density system applications.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C.

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類型 標題 日期
* Data sheet Excalibur JFET-Input High-Output-Drive Micro Power Operational Amplifiers datasheet (Rev. D) 1996年 5月 1日
E-book The Signal e-book: A compendium of blog posts on op amp design topics 2017年 3月 28日
Application note TLE2161 EMI Immunity Performance 2013年 12月 31日

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