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運算放大器 (op amps)
一般用途運算放大器

TLV2313-Q1

現行

車規、雙路、5.5V、1MHz、RRIO 運算放大器

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TLV9002-Q1 現行 適合成本最佳化應用的車規、雙路、5.5-V、1-MHz、RRIO 運算放大器 Faster slew rate (2 V/us), lower offset voltage (1.5 mV), lower power (0.06 mA), higher output current (40 mA)

TLV2313-Q1

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 1.8 Rail-to-rail In, Out GBW (typ) (MHz) 1 Slew rate (typ) (V/µs) 0.5 Vos (offset voltage at 25°C) (max) (mV) 3 Iq per channel (typ) (mA) 0.065 Vn at 1 kHz (typ) (nV√Hz) 26 Rating Automotive Operating temperature range (°C) -40 to 125 Offset drift (typ) (µV/°C) 2 Features Cost Optimized, EMI Hardened CMRR (typ) (dB) 85 Iout (typ) (A) 0.015 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.2 Input common mode headroom (to positive supply) (typ) (V) 0.2 Output swing headroom (to negative supply) (typ) (V) 0.075 Output swing headroom (to positive supply) (typ) (V) -0.1
Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 1.8 Rail-to-rail In, Out GBW (typ) (MHz) 1 Slew rate (typ) (V/µs) 0.5 Vos (offset voltage at 25°C) (max) (mV) 3 Iq per channel (typ) (mA) 0.065 Vn at 1 kHz (typ) (nV√Hz) 26 Rating Automotive Operating temperature range (°C) -40 to 125 Offset drift (typ) (µV/°C) 2 Features Cost Optimized, EMI Hardened CMRR (typ) (dB) 85 Iout (typ) (A) 0.015 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.2 Input common mode headroom (to positive supply) (typ) (V) 0.2 Output swing headroom (to negative supply) (typ) (V) 0.075 Output swing headroom (to positive supply) (typ) (V) -0.1
SOIC (D) 8 29.4 mm² 4.9 x 6 VSSOP (DGK) 8 14.7 mm² 3 x 4.9
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results
    • Device Temperature Grade 1: –40°C to +125°C
      Ambient Operating Temperature Range
    • Device HBM ESD Classification Level 3A
    • Device CDM ESD Classification Level C6
  • Precision Amplifier for Cost-Sensitive Systems
  • Low IQ: 65 µA/ch
  • Wide Supply Range: 1.8 V to 5.5 V
  • Low Noise: 26 nV/√Hz at 1 kHz
  • Gain Bandwidth: 1 MHz
  • Rail-to-Rail Input/Output
  • Low Input Bias Current: 1 pA
  • Low Offset Voltage: 0.75 mV
  • Unity-Gain Stable
  • Internal RFI/EMI Filter
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results
    • Device Temperature Grade 1: –40°C to +125°C
      Ambient Operating Temperature Range
    • Device HBM ESD Classification Level 3A
    • Device CDM ESD Classification Level C6
  • Precision Amplifier for Cost-Sensitive Systems
  • Low IQ: 65 µA/ch
  • Wide Supply Range: 1.8 V to 5.5 V
  • Low Noise: 26 nV/√Hz at 1 kHz
  • Gain Bandwidth: 1 MHz
  • Rail-to-Rail Input/Output
  • Low Input Bias Current: 1 pA
  • Low Offset Voltage: 0.75 mV
  • Unity-Gain Stable
  • Internal RFI/EMI Filter

The TLVx313-Q1 family of single- and dual-channel operational amplifiers combine low power consumption with good performance. This makes them designed for a wide range of applications, such as infotainment, engine control units, automotive lighting and more. The family features rail-to-rail input and output (RRIO) swings, low quiescent current (65 µA, typical), wide bandwidth (1 MHz) and very low noise (26 nV/√Hz at 1 kHz), making them attractive for a variety of battery-powered applications that require a good balance between cost and performance. Further, low-input-bias current enables these devices to be used in applications with megaohm source impedances.

The robust design of the TLVx313-Q1 devices provides ease-of-use to the circuit designer: unity-gain stability with capacitive loads of up to 100 pF, integrated RFI/EMI rejection filter, no phase reversal in overdrive conditions, and high electrostatic discharge (ESD) protection (4-kV HBM).

The devices are optimized for operation at voltages as low as 1.8 V (±0.9 V) and up to 5.5 V (±2.75 V), and are specified over the extended temperature range of –40°C to +125°C.

The single-channel TLV313-Q1 device is available in an SC70-5 package.The dual-channel TLV2313-Q1 device is offered in SOIC-8 (D) and VSSOP-8 (DGK) packages.

The TLVx313-Q1 family of single- and dual-channel operational amplifiers combine low power consumption with good performance. This makes them designed for a wide range of applications, such as infotainment, engine control units, automotive lighting and more. The family features rail-to-rail input and output (RRIO) swings, low quiescent current (65 µA, typical), wide bandwidth (1 MHz) and very low noise (26 nV/√Hz at 1 kHz), making them attractive for a variety of battery-powered applications that require a good balance between cost and performance. Further, low-input-bias current enables these devices to be used in applications with megaohm source impedances.

The robust design of the TLVx313-Q1 devices provides ease-of-use to the circuit designer: unity-gain stability with capacitive loads of up to 100 pF, integrated RFI/EMI rejection filter, no phase reversal in overdrive conditions, and high electrostatic discharge (ESD) protection (4-kV HBM).

The devices are optimized for operation at voltages as low as 1.8 V (±0.9 V) and up to 5.5 V (±2.75 V), and are specified over the extended temperature range of –40°C to +125°C.

The single-channel TLV313-Q1 device is available in an SC70-5 package.The dual-channel TLV2313-Q1 device is offered in SOIC-8 (D) and VSSOP-8 (DGK) packages.

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* Data sheet TLVx313-Q1 Low-Power, Rail-to-Rail In/Out, 750-µV Typical Offset, 1-MHz Operational Amplifier for Cost-Sensitive Systems datasheet (Rev. A) PDF | HTML 2018年 12月 3日

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