產品詳細資料

Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 8 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 2 Rail-to-rail In to V-, Out GBW (typ) (MHz) 0.32 Slew rate (typ) (V/µs) 3.6 Vos (offset voltage at 25°C) (max) (mV) 9 Iq per channel (typ) (mA) 0.7 Vn at 1 kHz (typ) (nV√Hz) 25 Rating Catalog Operating temperature range (°C) -40 to 85 Offset drift (typ) (µV/°C) 2.7 Input bias current (max) (pA) 200 CMRR (typ) (dB) 80 Iout (typ) (A) 0.009 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.3 Input common mode headroom (to positive supply) (typ) (V) -0.8 Output swing headroom (to negative supply) (typ) (V) 0.09 Output swing headroom (to positive supply) (typ) (V) -1.2
Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 8 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 2 Rail-to-rail In to V-, Out GBW (typ) (MHz) 0.32 Slew rate (typ) (V/µs) 3.6 Vos (offset voltage at 25°C) (max) (mV) 9 Iq per channel (typ) (mA) 0.7 Vn at 1 kHz (typ) (nV√Hz) 25 Rating Catalog Operating temperature range (°C) -40 to 85 Offset drift (typ) (µV/°C) 2.7 Input bias current (max) (pA) 200 CMRR (typ) (dB) 80 Iout (typ) (A) 0.009 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.3 Input common mode headroom (to positive supply) (typ) (V) -0.8 Output swing headroom (to negative supply) (typ) (V) 0.09 Output swing headroom (to positive supply) (typ) (V) -1.2
PDIP (P) 8 92.5083 mm² 9.81 x 9.43 SOIC (D) 8 29.4 mm² 4.9 x 6 TSSOP (PW) 8 19.2 mm² 3 x 6.4
  • Wide Range of Supply Voltages Over Specified Temperature Range:
  • -40°C to 85°C...2 V to 8 V
  • Fully Characterized at 3 V and 5 V
  • Single-Supply Operation
  • Common-Mode Input-Voltage Range Extends Below the Negative Rail and Up to VDD -1 V at 25°C
  • Output Voltage Range Includes Negative Rail
  • High Input Impedance...1012 Typical
  • ESD-Protection Circuitry
  • Designed-In Latch-Up Immunity
  • LinCMOS is a trademark of Texas Instruments Incorporated.

  • Wide Range of Supply Voltages Over Specified Temperature Range:
  • -40°C to 85°C...2 V to 8 V
  • Fully Characterized at 3 V and 5 V
  • Single-Supply Operation
  • Common-Mode Input-Voltage Range Extends Below the Negative Rail and Up to VDD -1 V at 25°C
  • Output Voltage Range Includes Negative Rail
  • High Input Impedance...1012 Typical
  • ESD-Protection Circuitry
  • Designed-In Latch-Up Immunity
  • LinCMOS is a trademark of Texas Instruments Incorporated.

The TLV234x operational amplifiers are in a family of devices that has been specifically designed for use in low-voltage single-supply applications. Unlike other products in this family designed primarily to meet aggressive power consumption specifications, the TLV234x was developed to offer ac performance approaching that of a BiFET operational amplifier while operating from a single-supply rail. At 3 V, the TLV234x has a typical slew rate of 2.1 V/us and 790-kHz unity-gain bandwidth.

Each amplifier is fully functional down to a minimum supply voltage of 2 V and is fully characterized, tested, and specified at both 3-V and 5-V power supplies over a temperature range of -40°C to 85°C. The common-mode input voltage range includes the negative rail and extends to within 1 V of the positive rail.

Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate LinCMOS technology. The LinCMOS process also features extremely high input impedance and ultra-low input bias currents. These parameters combined with good ac performance make the TLV234x effectual in applications such as high-frequency filters and wide-bandwidth sensors.

To facilitate the design of small portable equipment, the TLV234x is made available in a wide range of package options, including the small-outline and thin-shrink small-outline packages (TSSOP). The TSSOP package has significantly reduced dimensions compared to a standard surface-mount package. Its maximum height of only 1.1 mm makes it particularly attractive when space is critical.

The device inputs and outputs are designed to withstand -100-mA currents without sustaining latch-up. The TLV234x incorporates internal ESD-protection circuits that prevents functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.

The TLV234x operational amplifiers are in a family of devices that has been specifically designed for use in low-voltage single-supply applications. Unlike other products in this family designed primarily to meet aggressive power consumption specifications, the TLV234x was developed to offer ac performance approaching that of a BiFET operational amplifier while operating from a single-supply rail. At 3 V, the TLV234x has a typical slew rate of 2.1 V/us and 790-kHz unity-gain bandwidth.

Each amplifier is fully functional down to a minimum supply voltage of 2 V and is fully characterized, tested, and specified at both 3-V and 5-V power supplies over a temperature range of -40°C to 85°C. The common-mode input voltage range includes the negative rail and extends to within 1 V of the positive rail.

Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate LinCMOS technology. The LinCMOS process also features extremely high input impedance and ultra-low input bias currents. These parameters combined with good ac performance make the TLV234x effectual in applications such as high-frequency filters and wide-bandwidth sensors.

To facilitate the design of small portable equipment, the TLV234x is made available in a wide range of package options, including the small-outline and thin-shrink small-outline packages (TSSOP). The TSSOP package has significantly reduced dimensions compared to a standard surface-mount package. Its maximum height of only 1.1 mm makes it particularly attractive when space is critical.

The device inputs and outputs are designed to withstand -100-mA currents without sustaining latch-up. The TLV234x incorporates internal ESD-protection circuits that prevents functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.

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類型 標題 日期
* Data sheet LinCMOS Programmable Low-Voltage High-Speed Operational Amplifiers datasheet 1997年 2月 1日
E-book The Signal e-book: A compendium of blog posts on op amp design topics 2017年 3月 28日
Application note TLV2342 and TLV2344 EMI Immunity Performance 2013年 12月 31日

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PDIP (P) 8 檢視選項
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TSSOP (PW) 8 檢視選項

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