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DDR 記憶體電源 IC

TPS65295

現行

4.5V 至 18V 輸入電壓完整 DDR4 記憶體電源解決方案

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產品規格表

TPS65295

現行
產品規格表 立即訂購

產品詳細資料

DDR memory type DDR4 Control mode D-CAP3 Iout VDDQ (max) (A) 8 Iout VTT (max) (A) 1 Iq (typ) (mA) 0.15 Output VDDQ, VREF, VTT Vin (min) (V) 4.5 Vin (max) (V) 18 Features Complete Solution Rating Catalog Operating temperature range (°C) -40 to 125 Regulator type Step-Down Converter Vin bias (max) (V) 16 Vin bias (min) (V) 4.5 Vout VTT (min) (V) 0.6
DDR memory type DDR4 Control mode D-CAP3 Iout VDDQ (max) (A) 8 Iout VTT (max) (A) 1 Iq (typ) (mA) 0.15 Output VDDQ, VREF, VTT Vin (min) (V) 4.5 Vin (max) (V) 18 Features Complete Solution Rating Catalog Operating temperature range (°C) -40 to 125 Regulator type Step-Down Converter Vin bias (max) (V) 16 Vin bias (min) (V) 4.5 Vout VTT (min) (V) 0.6
VQFN-HR (RJE) 18 9 mm² 3 x 3
  • Synchronous buck converter (VDDQ)
    • Input voltage range: 4.5 V to 18 V
    • Output voltage fixed at 1.2 V
    • D-CAP3™ mode control for fast transient response
    • Continual output current: 8 A
    • Advanced Eco-mode™ pulse skip
    • Integrated 22-mΩ and 8.6-mΩ RDS(on) internal power switch
    • 600-kHz switching frequency
    • Internal soft start: 1.6 ms
    • Cycle-by-cycle overcurrent protection
    • Latched output OV and UV protections
  • Synchronous buck converter (VPP)
    • Input voltage range: 3 V to 5.5 V
    • Output voltage fixed at 2.5 V
    • D-CAP3™ mode control for fast transient response
    • Continual output current: 1 A
    • Advanced Eco-mode™ pulse skip
    • Integrated 150-mΩ and 120-mΩ RDS(on) internal power switch
    • 580-kHz switching frequency
    • Internal soft start: 1 ms
    • Cycle-by-cycle overcurrent protection
    • Latched output OV and UV protections
  • 1-A LDO (VTT)
    • 1-A continual sink and source current
    • Requires only 10 µF of ceramic output capacitor
    • Support high-z in S3
    • ±30-mV VTT output accuracy (DC+AC)
  • Buffered reference (VTTREF)
    • Buffered, low noise, ±10-mA capability
    • 0.8% output accuracy
  • Low quiescent current: 150 µA
  • Power good indicator
  • Output discharge function
  • Power up and power down sequencing control
  • Non-latch for OT and UVLO protections
  • 18-pin 3.0-mm × 3.0-mm HotRod™ VQFN package
  • Synchronous buck converter (VDDQ)
    • Input voltage range: 4.5 V to 18 V
    • Output voltage fixed at 1.2 V
    • D-CAP3™ mode control for fast transient response
    • Continual output current: 8 A
    • Advanced Eco-mode™ pulse skip
    • Integrated 22-mΩ and 8.6-mΩ RDS(on) internal power switch
    • 600-kHz switching frequency
    • Internal soft start: 1.6 ms
    • Cycle-by-cycle overcurrent protection
    • Latched output OV and UV protections
  • Synchronous buck converter (VPP)
    • Input voltage range: 3 V to 5.5 V
    • Output voltage fixed at 2.5 V
    • D-CAP3™ mode control for fast transient response
    • Continual output current: 1 A
    • Advanced Eco-mode™ pulse skip
    • Integrated 150-mΩ and 120-mΩ RDS(on) internal power switch
    • 580-kHz switching frequency
    • Internal soft start: 1 ms
    • Cycle-by-cycle overcurrent protection
    • Latched output OV and UV protections
  • 1-A LDO (VTT)
    • 1-A continual sink and source current
    • Requires only 10 µF of ceramic output capacitor
    • Support high-z in S3
    • ±30-mV VTT output accuracy (DC+AC)
  • Buffered reference (VTTREF)
    • Buffered, low noise, ±10-mA capability
    • 0.8% output accuracy
  • Low quiescent current: 150 µA
  • Power good indicator
  • Output discharge function
  • Power up and power down sequencing control
  • Non-latch for OT and UVLO protections
  • 18-pin 3.0-mm × 3.0-mm HotRod™ VQFN package

The TPS65295 device provides a complete power solution for DDR4 memory system with the lowest total cost and minimum space. It meets the JEDEC standard for DDR4 power-up and power-down sequence requirement. The TPS65295 integrates two synchronous buck converters (VPP and VDDQ) and a 1-A sink and source tracking LDO (VTT) and a buffered low noise reference (VTTREF). The TPS65295 employs D-CAP3™ mode coupled with 600-kHz switching frequency for ease-of-use, fast transient, and support for ceramic output capacitors without an external compensation circuit.

The VTTREF tracks ½ VDDQ within excellent 0.8% accuracy. The VTT, which provides both 1-A sink and source continual current capabilities, requires only 10-µF of ceramic output capacitor.

The TPS65295 provides rich functions as well as excellent power supply performance. It supports flexible power state control, placing VTT at high-Z in S3 and discharging VDDQ, VTT, and VTTREF in S4/S5 state. OVP, UVP, OCP, UVLO and thermal shutdown protections are also available. The part is available in a thermally enhanced 18-pin HotRod™ VQFN package and is designed to operate under the –40°C to 125°C junction temperature range.

The TPS65295 device provides a complete power solution for DDR4 memory system with the lowest total cost and minimum space. It meets the JEDEC standard for DDR4 power-up and power-down sequence requirement. The TPS65295 integrates two synchronous buck converters (VPP and VDDQ) and a 1-A sink and source tracking LDO (VTT) and a buffered low noise reference (VTTREF). The TPS65295 employs D-CAP3™ mode coupled with 600-kHz switching frequency for ease-of-use, fast transient, and support for ceramic output capacitors without an external compensation circuit.

The VTTREF tracks ½ VDDQ within excellent 0.8% accuracy. The VTT, which provides both 1-A sink and source continual current capabilities, requires only 10-µF of ceramic output capacitor.

The TPS65295 provides rich functions as well as excellent power supply performance. It supports flexible power state control, placing VTT at high-Z in S3 and discharging VDDQ, VTT, and VTTREF in S4/S5 state. OVP, UVP, OCP, UVLO and thermal shutdown protections are also available. The part is available in a thermally enhanced 18-pin HotRod™ VQFN package and is designed to operate under the –40°C to 125°C junction temperature range.
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* Data sheet TPS65295 complete DDR4 memory power solution datasheet PDF | HTML 2019年 2月 22日
Application note Non-Isolated Point-of-Load Solutions for Tiger Lake in PC Applications (Rev. B) PDF | HTML 2021年 4月 29日
EVM User's guide TPS65295EVM-079 user's guide 2018年 12月 4日

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TPS65295EVM-079 — 8-A 降壓轉換器評估模組

The TPS65295 evaluation module (EMV) is used to evaluate the TPS65295 device. The TPS65295 device provides a complete power solution for DDR4 memory system with the lowest total cost and minimum space. It meets the JEDEC standard for DDR4 power-up and power-down sequence requirement. The (...)
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TPS65295 PSpice Transient Model

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