TPS65296

現行

4.5V 至 18V VIN 完整 LPDDR4 和 LPDDR4X 記憶體電源解決方案

產品詳細資料

DDR memory type LPDDR4, LPDDR4X Control mode D-CAP3 Iout VDDQ (max) (A) 8 Iout VTT (max) (A) 1.5 Iq (typ) (mA) 0.15 Output VDDQ, VREF, VTT Vin (min) (V) 4.5 Vin (max) (V) 18 Features Complete Solution, Eco Mode, S3/S5 Support Rating Catalog Operating temperature range (°C) -40 to 125 Regulator type Step-Down Module Vin bias (max) (V) 16 Vin bias (min) (V) 4.5 Vout VTT (min) (V) 0.6
DDR memory type LPDDR4, LPDDR4X Control mode D-CAP3 Iout VDDQ (max) (A) 8 Iout VTT (max) (A) 1.5 Iq (typ) (mA) 0.15 Output VDDQ, VREF, VTT Vin (min) (V) 4.5 Vin (max) (V) 18 Features Complete Solution, Eco Mode, S3/S5 Support Rating Catalog Operating temperature range (°C) -40 to 125 Regulator type Step-Down Module Vin bias (max) (V) 16 Vin bias (min) (V) 4.5 Vout VTT (min) (V) 0.6
VQFN-HR (RJE) 18 9 mm² 3 x 3
  • Synchronous buck converter (VDD2)
    • Input voltage range: 4.5 V to 18 V
    • Output voltage fixed at 1.1 V
    • D-CAP3™ mode control for fast transient response
    • Continual output current: 8 A
    • Advanced Eco-mode™ pulse skip
    • Integrated 22-mΩ / 8.6-mΩ RDS(on) internal power switch
    • 600-kHz switching frequency
    • Internal soft start: 1.6 ms
    • Cycle-by-cycle overcurrent protection
    • Latched output OV/UV protections
  • Synchronous buck converter (VDD1)
    • Input voltage range: 3 V to 5.5 V
    • Output voltage fixed at 1.8 V
    • D-CAP3™ mode control for fast transient response
    • Continual output current: 1 A
    • Advanced Eco-mode™ pulse skip
    • Integrated 150-mΩ /120-mΩ RDS(on) internal power switch
    • 580-kHz switching frequency
    • Internal soft start: 1 ms
    • Cycle-by-cycle overcurrent protection
    • Latched output OV/UV protections
  • 1.5-A LDO (VDDQ)
    • 1.5-A continual output current
    • Requires only 10 µF of ceramic output capacitor
    • Support high-Z in S3
    • ±30-mV VDDQ output accuracy (DC+AC)
  • Low quiescent current: 150 µA
  • Power good indicator
  • Output discharge function
  • Power up and power down sequencing control
  • Non-latch for OT and UVLO protections
  • 18-pin 3.0-mm × 3.0-mm HotRod™ VQFN package
  • Synchronous buck converter (VDD2)
    • Input voltage range: 4.5 V to 18 V
    • Output voltage fixed at 1.1 V
    • D-CAP3™ mode control for fast transient response
    • Continual output current: 8 A
    • Advanced Eco-mode™ pulse skip
    • Integrated 22-mΩ / 8.6-mΩ RDS(on) internal power switch
    • 600-kHz switching frequency
    • Internal soft start: 1.6 ms
    • Cycle-by-cycle overcurrent protection
    • Latched output OV/UV protections
  • Synchronous buck converter (VDD1)
    • Input voltage range: 3 V to 5.5 V
    • Output voltage fixed at 1.8 V
    • D-CAP3™ mode control for fast transient response
    • Continual output current: 1 A
    • Advanced Eco-mode™ pulse skip
    • Integrated 150-mΩ /120-mΩ RDS(on) internal power switch
    • 580-kHz switching frequency
    • Internal soft start: 1 ms
    • Cycle-by-cycle overcurrent protection
    • Latched output OV/UV protections
  • 1.5-A LDO (VDDQ)
    • 1.5-A continual output current
    • Requires only 10 µF of ceramic output capacitor
    • Support high-Z in S3
    • ±30-mV VDDQ output accuracy (DC+AC)
  • Low quiescent current: 150 µA
  • Power good indicator
  • Output discharge function
  • Power up and power down sequencing control
  • Non-latch for OT and UVLO protections
  • 18-pin 3.0-mm × 3.0-mm HotRod™ VQFN package

The TPS65296 device provides a complete power solution for LPDDR4/LPDDR4X memory system with the lowest total cost and minimum space. It meets the JEDEC standard for LPDDR4/LPDDR4X power-up and power-down sequence requirement. The TPS65296 integrates two synchronous buck converters (VDD1 and VDD2) and a 1.5-A LDO (VDDQ).

The TPS65296 employs D-CAP3™ mode with 600-kHz switching frequency for fast transient, good load/line regulation, and support for ceramic output capacitors without an external compensation circuit.

The TPS65296 provides rich functions as well as good efficiency with internal low Rdson power MOSFETs. It supports flexible power state control, placing VDDQ at high-Z in S3 and discharging VDD1, VDD2, and VDDQ in S4/S5 state. Full protection features include OVP, UVP, OCP, UVLO and thermal shutdown protection. The part is available in a thermally enhanced 18-pin HotRod™ VQFN package and is designed to operate under the –40°C to 125°C junction temperature range.

The TPS65296 device provides a complete power solution for LPDDR4/LPDDR4X memory system with the lowest total cost and minimum space. It meets the JEDEC standard for LPDDR4/LPDDR4X power-up and power-down sequence requirement. The TPS65296 integrates two synchronous buck converters (VDD1 and VDD2) and a 1.5-A LDO (VDDQ).

The TPS65296 employs D-CAP3™ mode with 600-kHz switching frequency for fast transient, good load/line regulation, and support for ceramic output capacitors without an external compensation circuit.

The TPS65296 provides rich functions as well as good efficiency with internal low Rdson power MOSFETs. It supports flexible power state control, placing VDDQ at high-Z in S3 and discharging VDD1, VDD2, and VDDQ in S4/S5 state. Full protection features include OVP, UVP, OCP, UVLO and thermal shutdown protection. The part is available in a thermally enhanced 18-pin HotRod™ VQFN package and is designed to operate under the –40°C to 125°C junction temperature range.

下載 觀看有字幕稿的影片 影片

技術文件

star =TI 所選的此產品重要文件
找不到結果。請清除您的搜尋條件,然後再試一次。
檢視所有 1
類型 標題 日期
* Data sheet TPS65296-Complete LPDDR4/LPDDR4X Memory Power Solution datasheet (Rev. A) PDF | HTML 2020年 10月 7日

設計與開發

如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

TPS65295EVM-079 — 8-A 降壓轉換器評估模組

The TPS65295 evaluation module (EMV) is used to evaluate the TPS65295 device. The TPS65295 device provides a complete power solution for DDR4 memory system with the lowest total cost and minimum space. It meets the JEDEC standard for DDR4 power-up and power-down sequence requirement. The (...)
使用指南: PDF
TI.com 無法提供
模擬型號

TPS65296 TINA TI Reference Design

SLUM697.ZIP (471 KB) - TINA-TI Reference Design
封裝 引腳 下載
VQFN-HR (RJE) 18 檢視選項

訂購與品質

內含資訊:
  • RoHS
  • REACH
  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 資格摘要
  • 進行中可靠性監測
內含資訊:
  • 晶圓廠位置
  • 組裝地點

建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。

支援與培訓

內含 TI 工程師技術支援的 TI E2E™ 論壇

內容係由 TI 和社群貢獻者依「現狀」提供,且不構成 TI 規範。檢視使用條款

若有關於品質、封裝或訂購 TI 產品的問題,請參閱 TI 支援。​​​​​​​​​​​​​​

影片