UCC21755-Q1
- 5.7-kVRMS single-channel isolated gate driver
- AEC-Q100 Qualified with the following results:
- Device temperature grade 0: -40°C to +150°C ambient operating temperature range
- Device HBM ESD classification level 3A
- Device CDM ESD classification level C6
- Functional Safety Quality-Managed
- SiC MOSFETs and IGBTs up to 2121 Vpk
- 33-V maximum output drive voltage (VDD-VEE)
- ±10-A drive strength and split output
- 150-V/ns minimum CMTI
- 200-ns response time fast DESAT protection with 5-V threshold
- 4-A internal active Miller clamp
- 400-mA soft turn-off when fault happens
- Isolated analog sensor with PWM output for
- Temperature sensing with NTC, PTC, or thermal diode
- High voltage DC-link or phase voltage
- Alarm FLT on overcurrent and reset from RST/EN
- Fast enable/disable response on RST/EN
- Reject <40-ns noise transient and pulse on input pins
- 12-V VDD UVLO with power good on RDY
- Inputs/outputs with over- or under-shoot transient voltage immunity up to 5 V
- 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
- SOIC-16 DW package with creepage and clearance distance > 8mm
- Operating junction temperature –40°C to 150°C
The UCC21755-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance, and robustness. UCC21755-Q1 has up to ±10-A peak source and sink current.
The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40-years isolation barrier life, as well as providing low part-to-part skew , and >150-V/ns common mode noise immunity (CMTI).
The UCC21755-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers versatility and simplifying the system design effort, size, and cost.
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技術文件
類型 | 標題 | 日期 | ||
---|---|---|---|---|
* | Data sheet | UCC21755-Q1 Automotive 10-A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI datasheet | PDF | HTML | 2022年 9月 27日 |
Certificate | UCC217xx/-Q1 CQC Certificate of Product Certification | 2023年 6月 7日 |
設計與開發
如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。
UCC21750QDWEVM-025 — 適用於 SiC 和 IGBT 電晶體和電源模組的驅動和保護評估板
PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具
封裝 | 引腳 | 下載 |
---|---|---|
SOIC (DW) | 16 | 檢視選項 |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 資格摘要
- 進行中可靠性監測
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。