SLASFM1A June 2025 – December 2025 AFE10004-EP
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
Depletion mode PA devices, such as those based on gallium nitride (GaN) transistors, require special gate and drain bias sequencing for proper operation and to avoid damage. The device includes an automatic sequence control circuit that, in combination with the PA_ON pin, provides proper power-up and power-down sequences for the PA transistors.