SLUSAH0G october   2011  – august 2023 BQ25504

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Description (continued)
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Maximum Power Point Tracking
      2. 8.3.2 Battery Undervoltage Protection
      3. 8.3.3 Battery Overvoltage Protection
      4. 8.3.4 Battery Voltage in Operating Range (VBAT_OK Output)
      5. 8.3.5 Nano-Power Management and Efficiency
    4. 8.4 Device Functional Modes
      1. 8.4.1 Cold-Start Operation (VSTOR < VSTOR_CHGEN, VIN_DC > VIN(CS) and PIN > PIN(CS))
      2. 8.4.2 Main Boost Charger Enabled (VSTOR > VSTOR_CHGEN, VIN_DC > VIN(DC) and EN = LOW )
      3. 8.4.3 Thermal Shutdown
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Storage Element Selection
      2. 9.1.2 Inductor Selection
      3. 9.1.3 Capacitor Selection
        1. 9.1.3.1 VREF_SAMP Capacitance
        2. 9.1.3.2 VIN_DC Capacitance
        3. 9.1.3.3 VSTOR Capacitance
        4. 9.1.3.4 Additional Capacitance on VSTOR or VBAT
    2. 9.2 Typical Applications
      1. 9.2.1 Solar Application Circuit
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 TEG Application Circuit
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
      3. 9.2.3 MPPT Disabled, Low Impedance Source Application Circuit
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
        3. 9.2.3.3 Application Curves
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
  13. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
      2. 12.1.2 Zip Files
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Support Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  14. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.3.3 Battery Overvoltage Protection

To prevent rechargeable batteries from being exposed to excessive charging voltages and to prevent over charging a capacitive storage element, the over-voltage (VBAT_OV) threshold level must be set using external resistors. This is also the voltage value to which the charger will regulate the VSTOR/VBAT pin when the input has sufficient power. The VBAT_OV threshold when the battery voltage is rising is given by Equation 3:

Equation 3. GUID-E68DD8CF-7AF0-4539-BFDE-D20B550B48EC-low.gif

The sum of the resistors is recommended to be no higher 10 MΩ that is, ROV1 + ROV2 = 10 MΩ. Spreadsheet SLURAQ1 provides help with sizing and selecting the resistors.

The overvoltage threshold when the battery voltage is decreasing is given by VBAT_OV - VBAT_OV_HYST. Once the voltage at the battery reaches the VBAT_OV threshold, the boost converter is disabled. The charger will start again once the battery voltage drop by VBAT_OV_HYST. When there is excessive input energy, the VBAT pin voltage will ripple between the VBAT_OV and the VBAT_OV - VBAT_OV_HYST levels.

CAUTION:

If VIN_DC is higher than VSTOR and VSTOR is higher than VBAT_OV, the input VIN_DC is pulled to ground through a small resistance to stop further charging of the attached battery or capacitor. It is critical that if this case is expected, the impedance of the source attached to VIN_DC be higher than 20 Ω and not a low impedance source.