SLPS612B October   2016  – February 2022 CSD13385F5

PRODUCTION DATA  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Trademarks
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-source voltageVGS = 0 V, IDS = 250 μA12V
IDSSDrain-to-source leakage currentVGS = 0 V, VDS = 9.6 V50nA
IGSSGate-to-source leakage currentVDS = 0 V, VGS = 8 V25nA
VGS(th)Gate-to-source threshold voltageVDS = VGS, IDS = 250 μA0.50.81.2V
RDS(on)Drain-to-source on resistanceVGS = 1.8 V, IDS = 0.1 A2650mΩ
VGS = 2.5 V, IDS = 0.9 A1823
VGS = 4.5 V, IDS = 0.9 A1519
gfsTransconductanceVDS = 1.2 V, IDS = 0.9 A11.3S
DYNAMIC CHARACTERISTICS
CissInput capacitanceVGS = 0 V, VDS = 6 V,
ƒ = 1 MHz		519674pF
CossOutput capacitance305396pF
CrssReverse transfer capacitance2938pF
RGSeries gate resistance20Ω
QgGate charge total (4.5 V)VDS = 6 V, IDS = 0.9 A3.95.0nC
QgdGate charge gate-to-drain0.39nC
QgsGate charge gate-to-source0.74nC
Qg(th)Gate charge at Vth0.46nC
QossOutput chargeVDS = 6 V, VGS = 0 V2.5nC
td(on)Turnon delay timeVDS = 6 V, VGS = 4.5 V,
IDS = 0.9 A, RG = 2 Ω		7ns
trRise time10ns
td(off)Turnoff delay time33ns
tfFall time10ns
DIODE CHARACTERISTICS
VSDDiode forward voltageISD = 0.9 A, VGS = 0 V0.671.0V