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Product details

Parameters

VDS (V) 12 Configuration Single Rds(on) max at VGS=4.5 V (mOhms) 19 IDM, max pulsed drain current (Max) (A) 41 QG typ (nC) 3.9 QGD typ (nC) 0.39 Package (mm) LGA 0.8x1.5 VGS (V) 8 VGSTH typ (V) 0.8 Logic level Yes open-in-new Find other N-channel MOSFET transistors

Features

  • Low On Resistance
  • Low Qg and Qgd
  • Ultra-Small Footprint
    • 1.53 mm × 0.77 mm
  • Low Profile
    • 0.35-mm Height
  • Integrated ESD Protection Diode
    • Rated > 4-kV HBM
    • Rated > 2-kV CDM
  • Lead and Halogen Free
  • RoHS Compliant

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Description

This 12-V, 15-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.

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Technical documentation

= Top documentation for this product selected by TI
No results found. Please clear your search and try again. View all 6
Type Title Date
* Datasheet CSD13385F5 12-V N-Channel FemtoFET™ MOSFET datasheet (Rev. A) May 18, 2017
Technical articles Understanding the benefits of “lead-free” power MOSFETs Feb. 07, 2019
User guide Ultra-Small Footprint N-Channel FemtoFET™ MOSFET Test EVM Dec. 06, 2017
User guide FemtoFET Surface Mount Guide (Rev. D) Jul. 07, 2016
Technical articles When to use load switches in place of discrete MOSFETs Feb. 03, 2016
Technical articles 48V systems: Driving power MOSFETs efficiently and robustly Oct. 08, 2015

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Hardware development

EVALUATION BOARD Download
79
Description
This FemtoFET N-ch EVM includes seven daughter cards, each card containing a different FemtoFET N-ch part number.  The daughter cards allow the engineer to easily connect and test these tiny devices.  The seven FemtoFETs range from 12V to 40V Vds, and the size of the devices include F3 (...)
Features
  • Easy handling of these Land Grid Array (LGA) packaged parts
  • Full range of Vds and package size
  • Seven daughter cards can be snapped to create individual boards, with one FET per daughter card
  • FemtoFETs have the best Size*Resistance in the FET industry

Software development

SUPPORT SOFTWARE Download
SLPC019.ZIP (338 KB)

Design tools & simulation

SIMULATION MODEL Download
SLPM240A.ZIP (3 KB) - PSpice Model
SIMULATION MODEL Download
SLPM263.ZIP (10 KB) - TINA-TI Spice Model
SIMULATION MODEL Download
SLPM264.TSC (531 KB) - TINA-TI Reference Design
CALCULATION TOOL Download
Buck Converter NexFET™ Selection Tool
FETPWRCALC — This tool is designed to assist engineers in the selection of Texas Instruments’ discrete power MOSFET and Power Block devices for their synchronous buck design. Users can input the conditions for their power supply and compare various discrete and power block solutions by power loss, relative (...)
Features
  • Vary power supply conditions and observe TI’s most efficient solutions for any set of input parameters
  • Select from a pre-established list of TI controllers or enter your own custom IC
  • Rank solutions by effective power loss and compare by relative 1k price, device package, and total PCB footprint
  • (...)
CALCULATION TOOL Download
Power loss calculation tool for non-synchronous boost converter
NONSYNC-BOOST-FET-LOSS-CALC — MOSFET power loss calculator for non-synchronous boost converter
Features
  • Calculates power loss for TI MOSFETs

Reference designs

REFERENCE DESIGNS Download
Low-power options for smart meter wireless modules using primary cells reference design
TIDA-010053 — This reference design showcases three different power architectures for smart flow meters with lithium manganese dioxide (LiMnO2) primary batteries and commercial off-the-shelf narrowband modules for Internet of Things (IoT)-related applications. The three power solutions are combined with the (...)
document-generic Schematic

CAD/CAE symbols

Package Pins Download
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Ordering & quality

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