Product details

VDS (V) 12 Configuration Single Rds(on) max at VGS=4.5 V (mOhms) 19 IDM - pulsed drain current (Max) (A) 41 QG typ (nC) 3.9 QGD typ (nC) 0.39 Package (mm) LGA 1.5x0.8mm VGS (V) 8 VGSTH typ (V) 0.8 ID - silicon limited at Tc=25degC (A) 7.1 ID - package limited (A) 7.1 Logic level Yes
VDS (V) 12 Configuration Single Rds(on) max at VGS=4.5 V (mOhms) 19 IDM - pulsed drain current (Max) (A) 41 QG typ (nC) 3.9 QGD typ (nC) 0.39 Package (mm) LGA 1.5x0.8mm VGS (V) 8 VGSTH typ (V) 0.8 ID - silicon limited at Tc=25degC (A) 7.1 ID - package limited (A) 7.1 Logic level Yes
  • Low On Resistance
  • Low Qg and Qgd
  • Ultra-Small Footprint
    • 1.53 mm × 0.77 mm
  • Low Profile
    • 0.35-mm Height
  • Integrated ESD Protection Diode
    • Rated > 4-kV HBM
    • Rated > 2-kV CDM
  • Lead and Halogen Free
  • RoHS Compliant
  • Low On Resistance
  • Low Qg and Qgd
  • Ultra-Small Footprint
    • 1.53 mm × 0.77 mm
  • Low Profile
    • 0.35-mm Height
  • Integrated ESD Protection Diode
    • Rated > 4-kV HBM
    • Rated > 2-kV CDM
  • Lead and Halogen Free
  • RoHS Compliant

This 12-V, 15-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.

This 12-V, 15-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.

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Technical documentation

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Type Title Date
* Data sheet CSD13385F5 12-V N-Channel FemtoFET™ MOSFET datasheet (Rev. A) 18 May 2017
Technical article Understanding the benefits of “lead-free” power MOSFETs 08 Feb 2019
User guide Ultra-Small Footprint N-Channel FemtoFET™ MOSFET Test EVM 06 Dec 2017
Design guide FemtoFET Surface Mount Guide (Rev. D) 07 Jul 2016
Technical article When to use load switches in place of discrete MOSFETs 03 Feb 2016
Technical article 48V systems: Driving power MOSFETs efficiently and robustly 08 Oct 2015

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

CSD1FNCHEVM-889 — FemtoFET N-ch Evaluation Module

This FemtoFET N-ch EVM includes seven daughter cards, each card containing a different FemtoFET N-ch part number.  The daughter cards allow the engineer to easily connect and test these tiny devices.  The seven FemtoFETs range from 12V to 40V Vds, and the size of the devices include F3 (...)
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Support software

Power Loss Calculation Tool for Load Switch

SLPC019.ZIP (338 KB)
Simulation model

CSD13385F5 Unencrypted PSpice Model (Rev. A)

SLPM240A.ZIP (3 KB) - PSpice Model
Simulation model

CSD13385F5 TINA-TI Spice Model

SLPM263.ZIP (10 KB) - TINA-TI Spice Model
Simulation model

CSD13385F5 TINA-TI Reference Design

SLPM264.TSC (531 KB) - TINA-TI Reference Design
Calculation tool

NONSYNC-BOOST-FET-LOSS-CALC — Power loss calculation tool for non-synchronous boost converter

MOSFET power loss calculator for non-synchronous boost converter
Calculation tool

SYNC-BUCK-FET-LOSS-CALC — MOSFET power loss calculator for synchronous buck converter applications

MOSFET power loss calculator for synchronous buck converter applications
Reference designs

TIDA-010053 — Low-power option for smart meter wireless module using primary cells reference design

This reference design showcases three different power architectures for smart flow meters with lithium manganese dioxide (LiMnO2) primary batteries and commercial off-the-shelf narrowband modules for Internet of Things (IoT)-related applications. The three power solutions are combined with the (...)
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