SLPS262C February   2010  – December 2019 CSD17308Q3

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
    1.     Top View
      1.      Device Images
        1.       RDS(on) vs VGS
        2.       Gate Charge
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Support Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q3 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q3 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DQG|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications.

Top View

CSD17308Q3 P0095-01_LPS202.gif

Product Summary

TA = 25°C VALUE UNIT
VDS Drain-to-source voltage 30 V
Qg Gate charge total (4.5 V) 3.9 nC
Qgd Gate charge gate-to-drain 0.8 nC
RDS(on) Drain-to-source on-resistance VGS = 3 V 12.5 mΩ
VGS = 4.5 V 9.4
VGS = 8 V 8.2
VGS(th) Threshold voltage 1.3 V

Device Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD17308Q3 2500 13-Inch Reel SON 3.30 mm × 3.30 mm
Plastic Package		 Tape and Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C unless otherwise stated VALUE UNIT
VDS Drain-to-source voltage 30 V
VGS Gate-to-source voltage +10 / –8 V
ID Continuous drain current (package limited) 50 A
Continuous drain current, TC = 25°C 44
Continuous drain current(1) 14
IDM Pulsed drain current, TA = 25°C(2) 167 A
PD Power dissipation(1) 2.7 W
Power dissipation, TC = 25°C 28
TJ, Tstg Operating junction and storage temperature –55 to 150 °C
EAS Avalanche energy, single pulse
ID = 36 A, L = 0.1 mH, RG = 25 Ω		 65 mJ
  1. Typical RθJA = 46°C/W when mounted on a 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB.
  2. Max RθJC = 4.5°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.