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CSD17308Q3
- Optimized for 5-V gate drive
- Ultra-low Qg and Qgd
- Low thermal resistance
- Avalanche rated
- Lead-free terminal plating
- RoHS compliant
- Halogen free
- VSON 3.3 mm × 3.3 mm plastic package
This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications.
Technical documentation
Type | Title | Date | ||
---|---|---|---|---|
* | Data sheet | CSD17308Q3 30-V N-Channel NexFET™ Power MOSFETs datasheet (Rev. C) | PDF | HTML | 11 Dec 2019 |
Application note | Avoid Common Mistakes When Selecting And Designing With Power MOSFETs | PDF | HTML | 06 Nov 2024 | |
Application note | MOSFET Support and Training Tools (Rev. F) | PDF | HTML | 14 Jun 2024 | |
Application note | Semiconductor and IC Package Thermal Metrics (Rev. D) | PDF | HTML | 25 Mar 2024 | |
Application note | Using MOSFET Transient Thermal Impedance Curves In Your Design | PDF | HTML | 18 Dec 2023 | |
Application note | QFN and SON PCB Attachment (Rev. C) | PDF | HTML | 06 Dec 2023 | |
Application note | Using MOSFET Safe Operating Area Curves in Your Design | PDF | HTML | 13 Mar 2023 | |
Application brief | Tips for Successfully Paralleling Power MOSFETs | PDF | HTML | 31 May 2022 | |
Selection guide | Power Management Guide 2018 (Rev. R) | 25 Jun 2018 | ||
Application note | Ringing Reduction Techniques for NexFET High Performance MOSFETs | 16 Nov 2011 |
Design & development
For additional terms or required resources, click any title below to view the detail page where available.
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Package | Pins | CAD symbols, footprints & 3D models |
---|---|---|
VSON-CLIP (DQG) | 8 | Ultra Librarian |
Ordering & quality
- RoHS
- REACH
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- Lead finish/Ball material
- MSL rating/Peak reflow
- MTBF/FIT estimates
- Material content
- Qualification summary
- Ongoing reliability monitoring
- Fab location
- Assembly location
Recommended products may have parameters, evaluation modules or reference designs related to this TI product.
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