SLPS262C February   2010  – December 2019 CSD17308Q3

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
    1.     Top View
      1.      Device Images
        1.       RDS(on) vs VGS
        2.       Gate Charge
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Support Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q3 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q3 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DQG|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.1 Electrical Characteristics

TA = 25°C unless otherwise stated
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 30 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 24 V 1 μA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = +10 / –8 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 0.9 1.3 1.6 V
RDS(on) Drain-to-source on-resistance VGS = 3 V, ID = 10 A 12.5 16.5 mΩ
VGS = 4.5 V, ID = 10 A 9.4 11.8
VGS = 8 V, ID = 10 A 8.2 10.3
gfs Transconductance VDS = 15 V, ID = 10 A 37 S
DYNAMIC CHARACTERISTICS
CISS Input capacitance VGS = 0 V, VDS = 15 V, ƒ = 1 MHz 540 700 pF
COSS Output capacitance 280 365 pF
CRSS Reverse transfer capacitance 27 35 pF
Rg Series gate resistance 0.9 1.8 Ω
Qg Gate charge total (4.5 V) VDS = 15 V, ID = 10 A 3.9 5.1 nC
Qgd Gate charge gate-to-drain 0.8 nC
Qgs Gate charge gate-to-source 1.3 nC
Qg(th) Gate charge at Vth 0.7 nC
QOSS Output charge VDS = 13 V, VGS = 0 V 7.4 nC
td(on) Turnon delay time VDS = 15 V, VGS = 4.5 V, ID = 10 A,
RG = 2 Ω		 4.5 ns
tr Rise time 5.7 ns
td(off) Turnoff delay time 9.9 ns
tf Fall time 2.3 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage IDS = 10 A, VGS = 0 V 0.85 1 V
Qrr Reverse recovery charge VDD = 13 V, IF = 10 A, di/dt = 300 A/μs 9.3 nC
trr Reverse recovery time 14.3 ns