3 Description

This 30-V, 54-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Typical Part Dimensions

Product Summary

T_A = 25°C		TYPICAL VALUE		UNIT
V_DS	Drain-to-Source Voltage	30		V
Q_g	Gate Charge Total (4.5 V)	2.1		nC
Q_gd	Gate Charge Gate-to-Drain	0.63		nC
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 1.8 V	110	mΩ
		V_GS = 2.5 V	67	mΩ
		V_GS = 4.5 V	56	mΩ
		V_GS = 8.0 V	54	mΩ
V_GS(th)	Threshold Voltage	0.9		V

Device Information

DEVICE⁽¹⁾	QTY	MEDIA	PACKAGE	SHIP
CSD17382F4	3000	7-Inch Reel	Femto (0402) 1.0-mm × 0.6-mm SMD Lead Less	Tape and Reel
CSD17382F4T	250	7-Inch Reel	Femto (0402) 1.0-mm × 0.6-mm SMD Lead Less	Tape and Reel

(1) For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

T_A = 25°C		VALUE	UNIT
V_DS	Drain-to-Source Voltage	30	V
V_GS	Gate-to-Source Voltage	10	V
I_D	Continuous Drain Current⁽¹⁾	2.3	A
I_DM	Pulsed Drain Current⁽²⁾	14.8	A
P_D	Power Dissipation⁽¹⁾	500	mW
ESD Rating	Human Body Model (HBM)	3000	V
ESD Rating	Charged Device Model (CDM)	2000	V
T_J, T_stg	Operating Junction, Storage Temperature	–55 to 150	°C
E_AS	Avalanche Energy, Single Pulse I_D = 6.5 A, L = 0.1 mH, R_G = 25 Ω	2.1	mJ

(1) Typical R_θJA = 245°C/W on 1-in² (6.45-cm²), 2-oz.
(0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB.

(2) Pulse duration ≤100 μs, duty cycle ≤1%.

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