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CSD17382F4

ACTIVE

30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 67 mOhm, gate ESD protection

CSD17382F4

ACTIVE

Product details

There are no parameters available for this product.
PICOSTAR (YJC) 3 0.657225 mm² 1.035 x 0.635
  • Low on-resistance
  • Low Qg and Qgd
  • Low threshold voltage
  • Ultra-small footprint (0402 case size)
    • 1.0 mm × 0.6 mm
  • Ultra-low profile
    • 0.36-mm height
  • Integrated ESD protection diode
    • Rated > 3-kV HBM
    • Rated > 2-kV CDM
  • Lead and halogen free
  • RoHS compliant
  • Low on-resistance
  • Low Qg and Qgd
  • Low threshold voltage
  • Ultra-small footprint (0402 case size)
    • 1.0 mm × 0.6 mm
  • Ultra-low profile
    • 0.36-mm height
  • Integrated ESD protection diode
    • Rated > 3-kV HBM
    • Rated > 2-kV CDM
  • Lead and halogen free
  • RoHS compliant

This 30-V, 54-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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This 30-V, 54-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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PICOSTAR (YJC) 3 Ultra Librarian
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