SLPS601A April   2016  – August 2017 CSD23280F3

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YJM|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Features

  • Low On-Resistance
  • Ultra-Low Qg and Qgd
  • High-Operating Drain Current
  • Ultra-Small Footprint
    • 0.73 mm × 0.64 mm
  • Ultra-Low Profile
    • 0.35-mm Max Height
  • Integrated ESD Protection Diode
    • Rated > 4-kV HBM
    • Rated > 2-kV CDM
  • Lead and Halogen Free
  • RoHS Compliant

Applications

  • Optimized for Load Switch Applications
  • Optimized for General Purpose Switching Applications
  • Battery Applications
  • Handheld and Mobile Applications

Description

This –12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage –12 V
Qg Gate Charge Total (4.5 V) 0.95 nC
Qgd Gate Charge Gate-to-Drain 0.068 nC
RDS(on) Drain-to-Source
On-Resistance
VGS = –1.5 V 230
VGS = –1.8 V 180
VGS = –2.5 V 129
VGS = –4.5 V 97
VGS(th) Threshold Voltage –0.65 V

Device Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD23280F3 3000 7-Inch Reel Femto
0.73-mm × 0.64-mm
Land Grid Array (LGA)
Tape
and
Reel
CSD23280F3T 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage –12 V
VGS Gate-to-Source Voltage –6 V
ID Continuous Drain Current(1) 1.8 A
IDM Pulsed Drain Current(1)(2) 11.4 A
PD Power Dissipation(1) 500 mW
V(ESD) Human-Body Model (HBM) 4000 V
Charged-Device Model (CDM) 2000
TJ,
Tstg
Operating Junction,
Storage Temperature
–55 to 150 °C
  1. Typical RθJA = 255°C/W on 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB.
  2. Pulse duration ≤ 100 μs, duty cycle ≤ 1%.

Typical Part Dimensions

CSD23280F3 Layout_3d_SLPS578.gif

Top View

CSD23280F3 Top_View_90.gif