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CSD23280F3

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-12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 116 mOhm, gate ESD protection

Data sheet
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-12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 116 mOhm, gate ESD protection

CSD23280F3

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Data sheet Order now

Product details

Parameters

VDS (V) -12 VGS (V) -6 Configuration Single Rds(on) max at VGS=4.5 V (mOhms) 116 Rds(on) max at VGS=2.5 V (mOhms) 165 Rds(on) max at VGS=1.8 V (mOhms) 250 Id peak (Max) (A) -11.4 Id max cont (A) -1.8 QG typ (nC) 0.95 QGD typ (nC) 0.068 QGS typ (nC) 0.3 VGSTH typ (V) -0.65 Package (mm) LGA 0.7x0.6mm open-in-new Find other P-channel MOSFET transistors

Features

  • Low On-Resistance
  • Ultra-Low Qg and Qgd
  • High-Operating Drain Current
  • Ultra-Small Footprint
    • 0.73 mm × 0.64 mm
  • Ultra-Low Profile
    • 0.35-mm Max Height
  • Integrated ESD Protection Diode
    • Rated > 4-kV HBM
    • Rated > 2-kV CDM
  • Lead and Halogen Free
  • RoHS Compliant
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Description

This –12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.



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Technical documentation

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Type Title Date
* Data sheet CSD23280F3 –12-V P-Channel FemtoFET MOSFET datasheet (Rev. A) Aug. 01, 2017
Technical article Understanding the benefits of “lead-free” power MOSFETs Feb. 08, 2019
User guide Ultra-Small Footprint P-Channel FemtoFET™ MOSFET Test EVM Dec. 06, 2017
User guide FemtoFET Surface Mount Guide (Rev. D) Jul. 07, 2016
Technical article FemtoFET MOSFETs: small as sand but it’s all about that pitch Jun. 27, 2016
Technical article When to use load switches in place of discrete MOSFETs Feb. 03, 2016
Technical article 48V systems: Driving power MOSFETs efficiently and robustly Oct. 08, 2015

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Hardware development

EVALUATION BOARD Download
document-generic User guide
79
Description

This FemtoFET P-ch EVM includes six daughter cards, each card containing a different FemtoFET p-ch part number.  The daughter cards allow the engineer to easily connect and test these tiny devices.  The six FemtoFETs range from 12V to 20V Vds, and the size of the devices include F3 (...)

Features
  • Easy handling of these Land Grid Array (LGA) packaged parts
  • Full range of Vds and package size
  • Seven daughter cards can be snapped to create individual boards, with one FET per daughter card
  • FemtoFETs have the best Size*Resistance in the FET industry
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Software development

SUPPORT SOFTWARE Download
SLPC019.ZIP (338 KB)

Design tools & simulation

SIMULATION MODEL Download
SLPM175A.ZIP (3 KB) - PSpice Model

Reference designs

REFERENCE DESIGNS Download
Low-Power Water Flow Measurement With Inductive Sensing Reference Design
TIDA-01228 — This reference design demonstrates a highly-integrated solution for this application using an inductive sensing technique enabled by the CC1350 SimpleLink™ Wireless MCU and FemtoFET™ MOSFET. This reference design also provides the platform for integration of wireless communications such (...)
document-generic Schematic document-generic User guide
REFERENCE DESIGNS Download
High fidelity, near-field two-way audio reference design with noise reduction and echo cancellation
TIDA-01589 — Man machine interaction requires an acoustic interface for providing full duplex hands-free communication. In hands-free mode, part of the far-end or near-end audio signal from the speaker is coupled to the microphones. Furthermore, in noisy environments the microphones also capture ambient noise in (...)
document-generic Schematic document-generic User guide

CAD/CAE symbols

Package Pins Download
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Ordering & quality

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  • MSL rating/Peak reflow
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  • Qualification summary
  • Ongoing reliability monitoring

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