Product details

VDS (V) -12 VGS (V) -6 Configuration Single Rds(on) max at VGS=4.5 V (mOhms) 116 Rds(on) max at VGS=2.5 V (mOhms) 165 Rds(on) max at VGS=1.8 V (mOhms) 250 Id peak (Max) (A) -11.4 Id max cont (A) -1.8 QG typ (nC) 0.95 QGD typ (nC) 0.068 QGS typ (nC) 0.3 VGSTH typ (V) -0.65 Package (mm) LGA 0.7x0.6mm
VDS (V) -12 VGS (V) -6 Configuration Single Rds(on) max at VGS=4.5 V (mOhms) 116 Rds(on) max at VGS=2.5 V (mOhms) 165 Rds(on) max at VGS=1.8 V (mOhms) 250 Id peak (Max) (A) -11.4 Id max cont (A) -1.8 QG typ (nC) 0.95 QGD typ (nC) 0.068 QGS typ (nC) 0.3 VGSTH typ (V) -0.65 Package (mm) LGA 0.7x0.6mm
  • Low On-Resistance
  • Ultra-Low Qg and Qgd
  • High-operating drain current
  • Ultra-small footprint
    • 0.73 mm × 0.64 mm
  • Ultra-low profile
    • 0.36-mm max height
  • Integrated ESD protection diode
    • Rated > 4-kV HBM
    • Rated > 2-kV CDM
  • Lead and halogen free
  • RoHS compliant
  • Low On-Resistance
  • Ultra-Low Qg and Qgd
  • High-operating drain current
  • Ultra-small footprint
    • 0.73 mm × 0.64 mm
  • Ultra-low profile
    • 0.36-mm max height
  • Integrated ESD protection diode
    • Rated > 4-kV HBM
    • Rated > 2-kV CDM
  • Lead and halogen free
  • RoHS compliant

This –12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.

This –12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.

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Technical documentation

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Type Title Date
* Data sheet CSD23280F3 –12-V P-Channel FemtoFET MOSFET datasheet (Rev. B) PDF | HTML 08 Sep 2021
Application note Tips for Successfully Paralleling Power MOSFETs PDF | HTML 31 May 2022
More literature WCSP Handling Guide 07 Nov 2019
Technical article Understanding the benefits of “lead-free” power MOSFETs 08 Feb 2019
EVM User's guide Ultra-Small Footprint P-Channel FemtoFET™ MOSFET Test EVM 06 Dec 2017
Design guide FemtoFET Surface Mount Guide (Rev. D) 07 Jul 2016
Technical article FemtoFET MOSFETs: small as sand but it’s all about that pitch 27 Jun 2016
Application note Semiconductor and IC Package Thermal Metrics (Rev. C) PDF | HTML 19 Apr 2016
Technical article When to use load switches in place of discrete MOSFETs 03 Feb 2016
Technical article 48V systems: Driving power MOSFETs efficiently and robustly 08 Oct 2015

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

CSD1FPCHEVM-890 — FemtoFET P-ch Evaluation Module

This FemtoFET P-ch EVM includes six daughter cards, each card containing a different FemtoFET p-ch part number.  The daughter cards allow the engineer to easily connect and test these tiny devices.  The six FemtoFETs range from 12V to 20V Vds, and the size of the devices include F3 (...)

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Simulation model

CSD23280F3 Unencrypted PSpice Model (Rev. A) CSD23280F3 Unencrypted PSpice Model (Rev. A)

Reference designs

TIDA-01228 — Low-Power Water Flow Measurement With Inductive Sensing Reference Design

This reference design demonstrates a highly-integrated solution for this application using an inductive sensing technique enabled by the CC1350 SimpleLink™ Wireless MCU and FemtoFET™ MOSFET. This reference design also provides the platform for integration of wireless communications (...)
Reference designs

TIDA-01589 — High fidelity, near-field two-way audio reference design with noise reduction and echo cancellation

Man machine interaction requires an acoustic interface for providing full duplex hands-free communication. In hands-free mode, part of the far-end or near-end audio signal from the speaker is coupled to the microphones. Furthermore, in noisy environments the microphones also capture ambient noise (...)
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