SLPS601B April   2016  – February 2022 CSD23280F3

PRODUCTION DATA  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Trademarks
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YJM|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

This –12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.

GUID-3D3E4E6C-B356-436C-AC2D-751B112D563B-low.gif Typical Part Dimensions
Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage –12 V
Qg Gate Charge Total (4.5 V) 0.95 nC
Qgd Gate Charge Gate-to-Drain 0.068 nC
RDS(on) Drain-to-Source
On-Resistance		 VGS = –1.5 V 230 mΩ
VGS = –1.8 V 180
VGS = –2.5 V 129
VGS = –4.5 V 97
VGS(th) Threshold Voltage –0.65 V
Device Information(1)
DEVICE QTY MEDIA PACKAGE SHIP
CSD23280F3 3000 7-Inch Reel Femto
0.73-mm × 0.64-mm
Land Grid Array (LGA)		 Tape
and
Reel
CSD23280F3T 250
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage –12 V
VGS Gate-to-Source Voltage –6 V
ID Continuous Drain Current(1) 2.9 A
Continuous Drain Current(2) 1.8
IDM Pulsed Drain Current(1)(3) 11.4 A
PD Power Dissipation(1) 1.4 W
Power Dissipation(2) 0.5
V(ESD) Human-Body Model (HBM) 4000 V
Charged-Device Model (CDM) 2000
TJ,
Tstg		 Operating Junction,
Storage Temperature		 –55 to 150 °C
(1) Typical RθJA = 90°C/W on 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB
(2) Typical RθJA = 255°C/W on min Cu board
(3) Pulse duration ≤ 100 μs, duty cycle ≤ 1%.
GUID-6A943158-C398-425C-8EE3-92D55F35FAD9-low.gif Top View