SLPS459C January 2014 – February 2025 CSD25310Q2
PRODUCTION DATA
This 19.9mΩ, –20V P-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Its low on resistance coupled with an extremely small footprint in a SON 2mm × 2mm plastic package make the device ideal for battery operated space constrained operations.
RDS(on) vs VGS
Gate Charge| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | –20 | V | |
| Qg | Gate Charge Total (–4.5V) | 3.6 | nC | |
| Qgd | Gate Charge Gate to Drain | 0.5 | nC | |
| RDS(on) | Drain-to-Source On Resistance | VGS = –1.8V | 59.0 | mΩ |
| VGS = –2.5V | 27.0 | mΩ | ||
| VGS = –4.5V | 19.9 | mΩ | ||
| VGS(th) | Threshold Voltage | -0.85 | V | |
| Device | Media | Qty | Package | Ship |
|---|---|---|---|---|
| CSD25310Q2 | 7-Inch Reel | 3000 | SON 2mm x
2mm Plastic Package | Tape and Reel |
| CSD25310Q2T | 7-Inch Reel | 250 |
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | –20 | V |
| VGS | Gate-to-Source Voltage | ±8 | V |
| ID | Continuous Drain Current (Package Limit) | –20 | A |
| Continuous Drain Current(1) | –9.6 | A | |
| IDM | Pulsed Drain Current(2) | 48 | A |
| PD | Power Dissipation
| 2.9 | W |
| TJ, Tstg | Operating Junction and Storage Temperature Range | –55 to 150 | °C |
Top View