Product details

VDS (V) -20 VGS (V) -8 Configuration Single Rds(on) max at VGS=4.5 V (mOhms) 23.9 Rds(on) max at VGS=2.5 V (mOhms) 32.5 Rds(on) max at VGS=1.8 V (mOhms) 89 Id peak (Max) (A) -48 Id max cont (A) -9.6 QG typ (nC) 3.6 QGD typ (nC) 0.5 QGS typ (nC) 1.1 VGSTH typ (V) -0.85 Package (mm) SON 2x2
VDS (V) -20 VGS (V) -8 Configuration Single Rds(on) max at VGS=4.5 V (mOhms) 23.9 Rds(on) max at VGS=2.5 V (mOhms) 32.5 Rds(on) max at VGS=1.8 V (mOhms) 89 Id peak (Max) (A) -48 Id max cont (A) -9.6 QG typ (nC) 3.6 QGD typ (nC) 0.5 QGS typ (nC) 1.1 VGSTH typ (V) -0.85 Package (mm) SON 2x2
  • Ultra-Low Qg and Qgd
  • Low On Resistance
  • Low Thermal Resistance
  • Pb-Free
  • RoHS Compliant
  • Halogen Free
  • SON 2-mm × 2-mm Plastic Package
  • Ultra-Low Qg and Qgd
  • Low On Resistance
  • Low Thermal Resistance
  • Pb-Free
  • RoHS Compliant
  • Halogen Free
  • SON 2-mm × 2-mm Plastic Package

This 19.9 mΩ, –20 V P-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Its low on resistance coupled with an extremely small footprint in a SON 2 mm × 2 mm plastic package make the device ideal for battery operated space constrained operations.

For all available packages, see the orderable addendum at the end of the data sheet.

This 19.9 mΩ, –20 V P-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Its low on resistance coupled with an extremely small footprint in a SON 2 mm × 2 mm plastic package make the device ideal for battery operated space constrained operations.

For all available packages, see the orderable addendum at the end of the data sheet.

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Technical documentation

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Type Title Date
* Data sheet CSD25310Q2 20 V P-Channel NexFET Power MOSFETs datasheet (Rev. A) 05 Jun 2014
Technical article What type of ESD protection does your MOSFET include? 22 Jun 2020
Technical article Understanding the benefits of “lead-free” power MOSFETs 08 Feb 2019
Application note QFN and SON PCB Attachment (Rev. B) 24 Aug 2018
Technical article When to use load switches in place of discrete MOSFETs 03 Feb 2016
Technical article 48V systems: Driving power MOSFETs efficiently and robustly 08 Oct 2015
Application note Ringing Reduction Techniques for NexFET High Performance MOSFETs 16 Nov 2011

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Support software

Power Loss Calculation Tool for Load Switch

SLPC019.ZIP (338 KB)
Simulation model

CSD25310Q2 Unencrypted PSpice Model (Rev. B)

SLPM105B.ZIP (4 KB) - PSpice Model
Simulation model

CSD25310Q2 TINA-TI Spice Model

SLPM123.TSM (7 KB) - TINA-TI Spice Model
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Reference designs

PMP9491 — Audio Boom Box/Portable Speaker Reference Design with Efficient Boost Converter.

PMP9491 is a 30W highly efficient and compact Portable Speaker/Audio Boom Box reference Design which can be used in 15W +15W Stereo or 30W Woofer Applications. The Power Source for the Design is 1 or 2 Li ion in Series . The design is broadly divided into three main stages:
  1. Highly efficient (...)
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  • Ongoing reliability monitoring

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