SLPS578B April   2016  – February 2022 CSD25480F3

PRODUCTION DATA  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Trademarks
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-source voltageVGS = 0 V, IDS = –250 μA–20V
IDSSDrain-to-source leakage currentVGS = 0 V, VDS = –16 V–50nA
IGSSGate-to-source leakage currentVDS = 0 V, VGS = –12 V–25nA
VGS(th)Gate-to-source threshold voltageVDS = VGS, IDS = –250 μA–0.70–0.95–1.20V
RDS(on)Drain-to-source on-resistanceVGS = –1.8 V, IDS = –0.1 A420840mΩ
VGS = –2.5 V, IDS = –0.4 A203260
VGS = –4.5 V, IDS = –0.4 A132159
VGS = –8 V, IDS = –0.4 A110132
gfsTransconductanceVDS = –10 V, IDS = –0.4 A8.0S
DYNAMIC CHARACTERISTICS
CissInput capacitanceVGS = 0 V, VDS = –10 V,
ƒ = 1 MHz
119155pF
CossOutput capacitance4862pF
CrssReverse transfer capacitance3.64.7pF
RGSeries gate resistance16
QgGate charge total (–4.5 V)VDS = –10 V, IDS = –0.4 A0.700.91nC
QgdGate charge gate-to-drain0.10nC
QgsGate charge gate-to-source0.26nC
Qg(th)Gate charge at Vth0.15nC
QossOutput chargeVDS = –10 V, VGS = 0 V1.3nC
td(on)Turnon delay timeVDS = –10 V, VGS = –4.5 V,
IDS = –0.4 A, RG = 10 Ω
9ns
trRise time5ns
td(off)Turnoff delay time13ns
tfFall time7ns
DIODE CHARACTERISTICS
VSDDiode forward voltageISD = –0.4 A, VGS = 0 V–0.78–1.0V
QrrReverse recovery chargeVDS= –10 V, IF = –0.4 A, di/dt = 100 A/μs1.2nC
trrReverse recovery time6.4ns