Home Power management MOSFETs
Home
Power management
MOSFETs

CSD25480F3

ACTIVE

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 159 mOhm, gate ESD protection

Order now
Data sheet

CSD25480F3

ACTIVE
Data sheet Order now

Product details

VDS (V) -20 VGS (V) -12 Type P-channel Configuration Single Rds(on) at VGS=4.5 V (max) (mΩ) 159 Rds(on) at VGS=2.5 V (max) (mΩ) 260 VGSTH typ (typ) (V) -0.95 QG (typ) (nC) 0.7 QGD (typ) (nC) 0.1 QGS (typ) (nC) 0.26 ID - silicon limited at TC=25°C (A) 1.7 Logic level Yes Rating Catalog Operating temperature range (°C) -55 to 150
VDS (V) -20 VGS (V) -12 Type P-channel Configuration Single Rds(on) at VGS=4.5 V (max) (mΩ) 159 Rds(on) at VGS=2.5 V (max) (mΩ) 260 VGSTH typ (typ) (V) -0.95 QG (typ) (nC) 0.7 QGD (typ) (nC) 0.1 QGS (typ) (nC) 0.26 ID - silicon limited at TC=25°C (A) 1.7 Logic level Yes Rating Catalog Operating temperature range (°C) -55 to 150
PICOSTAR (YJM) 3 0.414 mm² 0.69 x 0.6
  • Low on-resistance
  • Ultra-low Qg and Qgd
  • Ultra-small footprint
    • 0.73 mm × 0.64 mm
  • Low profile
    • 0.36-mm max height
  • Integrated ESD protection diode
  • Lead and halogen free
  • RoHS compliant
  • Low on-resistance
  • Ultra-low Qg and Qgd
  • Ultra-small footprint
    • 0.73 mm × 0.64 mm
  • Low profile
    • 0.36-mm max height
  • Integrated ESD protection diode
  • Lead and halogen free
  • RoHS compliant

This –20-V, 110-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.

This –20-V, 110-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.
filter Find other MOSFETs
Download View video with transcript Video

Similar products you might be interested in

open-in-new Compare alternates
Pin-for-pin with same functionality to the compared device
CSD23280F3 ACTIVE -12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 116 mOhm, gate ESD protection Alternate 20 V versus 12 V, higher resistance

Technical documentation

star =Top documentation for this product selected by TI
No results found. Please clear your search and try again.
View all 12
Top documentation Type Title Format options Date
* Data sheet CSD25480F3 –20-V P-Channel FemtoFET MOSFET datasheet (Rev. B) PDF | HTML 08 Sep 2021
Application brief Estimating Leakage Currents of Power MOSFETs PDF | HTML 31 Oct 2025
Application note MOSFET Support and Training Tools (Rev. G) PDF | HTML 27 Oct 2025
Application note Semiconductor and IC Package Thermal Metrics (Rev. D) PDF | HTML 25 Mar 2024
Application note Using MOSFET Transient Thermal Impedance Curves In Your Design PDF | HTML 18 Dec 2023
Application note Solving Assembly Issues with Chip Scale Power MOSFETs PDF | HTML 14 Dec 2023
Application note Using MOSFET Safe Operating Area Curves in Your Design PDF | HTML 13 Mar 2023
Application brief Tips for Successfully Paralleling Power MOSFETs PDF | HTML 31 May 2022
Technical article What type of ESD protection does your MOSFET include? PDF | HTML 22 Jun 2020
More literature WCSP Handling Guide 07 Nov 2019
Design guide FemtoFET Surface Mount Guide (Rev. D) 07 Jul 2016
Technical article FemtoFET MOSFETs: small as sand but it’s all about that pitch PDF | HTML 27 Jun 2016

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

CSD1FPCHEVM-890 — FemtoFET P-ch Evaluation Module

This FemtoFET P-ch EVM includes six daughter cards, each card containing a different FemtoFET p-ch part number.  The daughter cards allow the engineer to easily connect and test these tiny devices.  The six FemtoFETs range from 12V to 20V Vds, and the size of the devices include F3 (...)

User guide: PDF
Not available on TI.com
Support software

LOAD-SWITCH-FET-LOSS-CALC — Power Loss Calculation Tool for Load Switch

Quickly trade off size, cost and performance to select the optimal MOSFET based on application conditions.
Supported products & hardware

Supported products & hardware
Download
Simulation model

CSD25480F3 TINA-TI Reference Design

SLPM322.TSC (1196 KB) - TINA-TI Reference Design
Download
Simulation model

CSD25480F3 TINA-TI Spice Model

SLPM323.ZIP (9 KB) - TINA-TI Spice Model
Download
Simulation model

CSD25480F3 Unencrypted PSpice Model (Rev. B)

SLPM178B.ZIP (3 KB) - PSpice Model
Download
Reference designs

TIDA-050039 — Energy harvesting from single cell solar panel for li-ion battery reference design

The TIDA-050039 reference design demonstrates how to use a fully-integrated synchronous boost converter TPS61089 in combination with a single-cell solar panel to charge a li-ion battery. An additional maximum power-point (MPP) sampling network is implemented to dynamically control the input (...)
Design guide: PDF
Schematic: PDF
Package Pins CAD symbols, footprints & 3D models
PICOSTAR (YJM) 3 Ultra Librarian
TI's Standard Terms and Conditions for Evaluation Items apply.

Ordering & quality

Information included:
  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring
Information included:
  • Fab location
  • Assembly location

Recommended products may have parameters, evaluation modules or reference designs related to this TI product.

Support & training

TI E2E™ forums with technical support from TI engineers

View all forum topics

Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.

If you have questions about quality, packaging or ordering TI products, see TI support. ​​​​​​​​​​​​​​

Videos