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Product details

Parameters

VDS (V) -20 VGS (V) -12 Configuration Single Rds(on) max at VGS=4.5 V (mOhms) 159 Rds(on) max at VGS=2.5 V (mOhms) 260 Rds(on) max at VGS=1.8 V (mOhms) 840 Id peak (Max) (A) -10.4 Id max cont (A) -1.7 QG typ (nC) 0.7 QGD typ (nC) 0.1 QGS typ (nC) 0.26 VGSTH typ (V) -0.95 Package (mm) LGA 0.6x0.7 open-in-new Find other P-channel MOSFET transistors

Features

  • Low On-Resistance
  • Ultra-Low Qg and Qgd
  • Ultra-Small Footprint
    • 0.73 mm × 0.64 mm
  • Low Profile
    • 0.35-mm Max Height
  • Integrated ESD Protection Diode
  • Lead and Halogen Free
  • RoHS Compliant

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Description

This –20-V, 110-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.





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Technical documentation

= Top documentation for this product selected by TI
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Type Title Date
* Datasheet CSD25480F3 –20-V P-Channel FemtoFET MOSFET datasheet (Rev. A) Aug. 02, 2017
Technical articles What type of ESD protection does your MOSFET include? Jun. 22, 2020
Technical articles Understanding the benefits of “lead-free” power MOSFETs Feb. 07, 2019
User guides Ultra-Small Footprint P-Channel FemtoFET™ MOSFET Test EVM Dec. 06, 2017
User guides FemtoFET Surface Mount Guide (Rev. D) Jul. 07, 2016
Technical articles FemtoFET MOSFETs: small as sand but it’s all about that pitch Jun. 27, 2016
Technical articles When to use load switches in place of discrete MOSFETs Feb. 03, 2016

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Hardware development

EVALUATION BOARDS Download
document-generic User guide
79
Description

This FemtoFET P-ch EVM includes six daughter cards, each card containing a different FemtoFET p-ch part number.  The daughter cards allow the engineer to easily connect and test these tiny devices.  The six FemtoFETs range from 12V to 20V Vds, and the size of the devices include F3 (...)

Features
  • Easy handling of these Land Grid Array (LGA) packaged parts
  • Full range of Vds and package size
  • Seven daughter cards can be snapped to create individual boards, with one FET per daughter card
  • FemtoFETs have the best Size*Resistance in the FET industry

Software development

SUPPORT SOFTWARE Download
SLPC019.ZIP (338 KB)

Design tools & simulation

SIMULATION MODELS Download
SLPM178A.ZIP (3 KB) - PSpice Model
SIMULATION MODELS Download
SLPM322.TSC (1196 KB) - TINA-TI Reference Design
SIMULATION MODELS Download
SLPM323.ZIP (9 KB) - TINA-TI Spice Model
CALCULATION TOOLS Download
Buck Converter NexFET™ Selection Tool
FETPWRCALC — This tool is designed to assist engineers in the selection of Texas Instruments’ discrete power MOSFET and Power Block devices for their synchronous buck design. Users can input the conditions for their power supply and compare various discrete and power block solutions by power loss, relative (...)
Features
  • Vary power supply conditions and observe TI’s most efficient solutions for any set of input parameters
  • Select from a pre-established list of TI controllers or enter your own custom IC
  • Rank solutions by effective power loss and compare by relative 1k price, device package, and total PCB footprint
  • (...)

Reference designs

REFERENCE DESIGNS Download
Energy harvesting from single cell solar panel for li-ion battery reference design
TIDA-050039 — The TIDA-050039 reference design demonstrates how to use a fully-integrated synchronous boost converter TPS61089 in combination with a single-cell solar panel to charge a li-ion battery. An additional maximum power-point (MPP) sampling network is implemented to dynamically control the input voltage (...)
document-generic Schematic document-generic User guide

CAD/CAE symbols

Package Pins Download
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Ordering & quality

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