SLPS578B April 2016 – February 2022 CSD25480F3
PRODUCTION DATA
- 1Features
- 2Applications
- 3Description
- 4Revision History
- 5Specifications
- 6Device and Documentation Support
- 7Mechanical, Packaging, and Orderable Information
Package Options
Mechanical Data (Package|Pins)
- YJM|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information
3 Description
This –20-V, 110-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.
Typical Part DimensionsProduct Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | –20 | V | |
| Qg | Gate Charge Total (–4.5 V) | 0.7 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 0.10 | nC | |
| RDS(on) | Drain-to-Source On-Resistance |
VGS = –1.8 V | 420 | mΩ |
| VGS = –2.5 V | 203 | |||
| VGS = –4.5 V | 132 | |||
| VGS = –8.0 V | 110 | |||
| VGS(th) | Threshold Voltage | –0.95 | V | |
Device Information(1)
| DEVICE | QTY | MEDIA | PACKAGE | SHIP |
|---|---|---|---|---|
| CSD25480F3 | 3000 | 7-Inch Reel | Femto 0.73-mm × 0.64-mm Land Grid Array (LGA) |
Tape and Reel |
| CSD25480F3T | 250 |
(1) For all available packages, see the orderable addendum at the
end of the data sheet.
Absolute Maximum Ratings
| TA = 25°C (unless otherwise stated) | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | –20 | V |
| VGS | Gate-to-Source Voltage | –12 | V |
| ID | Continuous Drain Current(1) | –1.7 | A |
| IDM | Pulsed Drain Current(1)(2) | –10.6 | A |
| PD | Power Dissipation(1) | 500 | mW |
| V(ESD) | Human-Body Model (HBM) | 4000 | V |
| Charged-Device Model (CDM) | 2000 | ||
| TJ, Tstg |
Operating Junction, Storage Temperature |
–55 to 150 | °C |
(1) Typical RθJA = 255°C/W mounted on FR4 material with
minimum Cu mounting area.
(2) Pulse duration ≤100 μs, duty cycle ≤1%.
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