SLVSHD9A March   2025  – December 2025 DRV8001-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings Auto
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information RHA package
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 External Components
    4. 7.4 Feature Description
      1. 7.4.1 Heater MOSFET Driver
        1. 7.4.1.1 Heater MOSFET Driver Control
        2. 7.4.1.2 Heater MOSFET Driver Protection
          1. 7.4.1.2.1 Heater SH_HS Internal Diode
          2. 7.4.1.2.2 Heater MOSFET VDS Overcurrent Protection (HEAT_VDS)
          3. 7.4.1.2.3 Heater MOSFET Open Load Detection
      2. 7.4.2 High-Side Drivers
        1. 7.4.2.1 High-side Driver Control
          1. 7.4.2.1.1 High-side Driver PWM Generator
          2. 7.4.2.1.2 Constant Current Mode
          3. 7.4.2.1.3 OUTx HS ITRIP Behavior
          4. 7.4.2.1.4 High-side Drivers - Parallel Outputs
        2. 7.4.2.2 High-side Driver Protection Circuits
          1. 7.4.2.2.1 High-side Drivers Internal Diode
          2. 7.4.2.2.2 High-side Driver Short-circuit Protection
          3. 7.4.2.2.3 High-side Driver Overcurrent Protection
          4. 7.4.2.2.4 High-side Driver Open Load Detection
      3. 7.4.3 Electrochromic Glass Driver
        1. 7.4.3.1 Electrochromic Driver Control
        2. 7.4.3.2 Electrochromic Driver Protection
      4. 7.4.4 Half-bridge Drivers
        1. 7.4.4.1 Half-bridge Control
        2. 7.4.4.2 OUT1 and OUT2 High-side Driver Mode
        3. 7.4.4.3 Half-bridge Register Control
        4. 7.4.4.4 Half-Bridge ITRIP Regulation
        5. 7.4.4.5 Half-bridge Protection and Diagnostics
          1. 7.4.4.5.1 Half-Bridge Off-State Diagnostics (OLP)
          2. 7.4.4.5.2 Half-bridge Open Load Detection
          3. 7.4.4.5.3 Half-Bridge Overcurrent Protection
      5. 7.4.5 Sense Output (IPROPI)
      6. 7.4.6 Protection Circuits
        1. 7.4.6.1 Fault Reset (CLR_FLT)
        2. 7.4.6.2 DVDD Logic Supply Power on Reset (DVDD_POR)
        3. 7.4.6.3 PVDD Supply Undervoltage Monitor (PVDD_UV)
        4. 7.4.6.4 PVDD Supply Overvoltage Monitor (PVDD_OV)
        5. 7.4.6.5 VCP Charge Pump Undervoltage Lockout (VCP_UV)
        6. 7.4.6.6 Thermal Clusters
        7. 7.4.6.7 Watchdog Timer
        8. 7.4.6.8 Fault Detection and Response Summary Table
    5. 7.5 Programming
      1. 7.5.1 Serial Peripheral Interface (SPI)
      2. 7.5.2 SPI Format
      3. 7.5.3 Timing Diagrams
  9. 8  DRV8001-Q1 Register Map
    1. 8.1 DRV8000-Q1_STATUS Registers
    2. 8.2 DRV8000-Q1_CNFG Registers
    3. 8.3 DRV8000-Q1_CTRL Registers
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
    3. 9.3 Initialization Setup
    4. 9.4 Power Supply Recommendations
      1. 9.4.1 Bulk Capacitance Sizing
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information
7.4.1.2.1 Heater SH_HS Internal Diode

Only a limited amount of energy (<1mJ) can be dissipated by the internal ESD diodes on SH_HS pin. TI recommends adding an external diode from ground to SH_HS pin in case of a load short condition. During a heater load short condition, the current is limited only by the saturation current of the external heater MOSFET. If the heater output is configured to shut off due to short-circuit detection, this same current dissipates through the internal ESD diode from ground to SH_HS, which is larger than the what the internal ESD diode can dissipate.