SLVSFN2B September   2021  – February 2022 DRV8311

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 SPI Timing Requirements
    7. 7.7 SPI Secondary Device Mode Timings
    8. 7.8 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Output Stage
      2. 8.3.2  Control Modes
        1. 8.3.2.1 6x PWM Mode (DRV8311S and DRV8311H variants only)
        2. 8.3.2.2 3x PWM Mode (DRV8311S and DRV8311H variants only)
        3. 8.3.2.3 PWM Generation Mode (DRV8311S and DRV8311P Variants)
      3. 8.3.3  Device Interface Modes
        1. 8.3.3.1 Serial Peripheral Interface (SPI)
        2. 8.3.3.2 Hardware Interface
      4. 8.3.4  AVDD Linear Voltage Regulator
      5. 8.3.5  Charge Pump
      6. 8.3.6  Slew Rate Control
      7. 8.3.7  Cross Conduction (Dead Time)
      8. 8.3.8  Propagation Delay
      9. 8.3.9  Pin Diagrams
        1. 8.3.9.1 Logic Level Input Pin (Internal Pulldown)
        2. 8.3.9.2 Logic Level Input Pin (Internal Pullup)
        3. 8.3.9.3 Open Drain Pin
        4. 8.3.9.4 Push Pull Pin
        5. 8.3.9.5 Four Level Input Pin
      10. 8.3.10 Current Sense Amplifiers
        1. 8.3.10.1 Current Sense Amplifier Operation
        2. 8.3.10.2 Current Sense Amplifier Offset Correction
      11. 8.3.11 Protections
        1. 8.3.11.1 VM Supply Undervoltage Lockout (NPOR)
        2. 8.3.11.2 Under Voltage Protections (UVP)
        3. 8.3.11.3 Overcurrent Protection (OCP)
          1. 8.3.11.3.1 OCP Latched Shutdown (OCP_MODE = 010b)
          2. 8.3.11.3.2 OCP Automatic Retry (OCP_MODE = 000b or 001b)
          3. 8.3.11.3.3 OCP Report Only (OCP_MODE = 011b)
          4. 8.3.11.3.4 OCP Disabled (OCP_MODE = 111b)
        4. 8.3.11.4 Thermal Protections
          1. 8.3.11.4.1 Thermal Warning (OTW)
          2. 8.3.11.4.2 Thermal Shutdown (OTSD)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Functional Modes
        1. 8.4.1.1 Sleep Mode
        2. 8.4.1.2 Operating Mode
        3. 8.4.1.3 Fault Reset (CLR_FLT or nSLEEP Reset Pulse)
    5. 8.5 SPI Communication
      1. 8.5.1 Programming
        1. 8.5.1.1 SPI and tSPI Format
  9. DRV8311 Registers
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 Three-Phase Brushless-DC Motor Control
        1. 10.2.1.1 Detailed Design Procedure
          1. 10.2.1.1.1 Motor Voltage
        2. 10.2.1.2 Driver Propagation Delay and Dead Time
        3. 10.2.1.3 Delay Compensation
        4. 10.2.1.4 Current Sensing and Output Filtering
        5. 10.2.1.5 Application Curves
    3. 10.3 Three Phase Brushless-DC tSPI Motor Control
      1. 10.3.1 Detailed Design Procedure
    4. 10.4 Alternate Applications
  11. 11Power Supply Recommendations
    1. 11.1 Bulk Capacitance
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
    3. 12.3 Thermal Considerations
      1. 12.3.1 Power Dissipation and Junction Temperature Estimation
  13. 13Device and Documentation Support
    1. 13.1 Support Resources
    2. 13.2 Trademarks
    3. 13.3 Electrostatic Discharge Caution
    4. 13.4 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Layout Guidelines

The bulk capacitor should be placed to minimize the distance of the high-current path through the motor driver device. The connecting metal trace widths should be as wide as possible, and numerous vias should be used when connecting PCB layers. These practices minimize inductance and allow the bulk capacitor to deliver high current.

Small-value capacitors should be ceramic, and placed closely to device pins including, AVDD, charge pump, CSAREF, VINAVDD and VM.

The high-current device outputs should use wide metal traces.

To reduce noise coupling and EMI interference from large transient currents into small-current signal paths, grounding should be partitioned between PGND and AGND. TI recommends connecting all non-power stage circuitry (including the thermal pad) to AGND to reduce parasitic effects and improve power dissipation from the device. Ensure grounds are connected through net-ties to reduce voltage offsets and maintain gate driver performance. A common ground plane can also be used for PGND and AGND to minimize inductance in the grounding, but it is recommended to place motor switching outputs as far away from analog and digital signals so motor noise does not couple into the analog and digital circuits.

The device thermal pad should be soldered to the PCB top-layer ground plane. Multiple vias should be used to connect to a large bottom-layer ground plane. The use of large metal planes and multiple vias helps dissipate the heat that is generated in the device.

To improve thermal performance, maximize the ground area that is connected to the thermal pad ground across all possible layers of the PCB. Using thick copper pours can lower the junction-to-air thermal resistance and improve thermal dissipation from the die surface.