SLVSH52 February 2023 DRV8316C-Q1
PRODUCTION DATA
Because the output stages use N-channel FETs, the device requires a gate-drive voltage higher than the VM power supply to enhance the high-side FETs fully. The DRV8316C-Q1 integrates a charge-pump circuit that generates a voltage above the VM supply for this purpose.
The charge pump requires two external capacitors for operation. See GUID-7CCA2E0A-1D16-4DB6-83F7-07316BF86EDA.html#FIG_JM4_WZD_5VB, GUID-7CCA2E0A-1D16-4DB6-83F7-07316BF86EDA.html#FIG_TFJ_ZZD_5VB, GUID-487D363F-6602-4EE7-B58B-89D32AEDA3CC.html and GUID-D83AE36B-B4C6-438B-A7F5-0B7549004C6C.html for details on these capacitors (value, connection, and so forth).
The charge pump shuts down when nSLEEP is low.