SNOSB66B August   2011  – November 2014 EMB1412

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Handling Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
  8. 8 Layout
    1. 8.1 Layout Guidelines
    2. 8.2 Thermal Performance
  9. 9 Device and Documentation Support
    1. 9.1 Trademarks
    2. 9.2 Electrostatic Discharge Caution
    3. 9.3 Glossary
  10. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 7 A Sink/3 A Source Current
  • Fast Propagation Times (25 ns Typical)
  • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load)
  • Inverting and Non-Inverting Inputs Provide Either Configuration with a Single Device
  • Supply Rail Under-Voltage Lockout Protection
  • Dedicated Input Ground (IN_REF) for Split Supply or Single Supply Operation
  • Thermally Enhanced 8-Pin VSSOP Package
  • Output Swings from VCC to VEE Which can be Negative Relative to Input Ground

2 Applications

  • Li-Ion Battery Management Systems
  • Hybrid and Electric Vehicles
  • Grid Storage
  • 48 V Systems Supply
  • UPS

3 Description

The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The EMB1412 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
EMB1412 HVSSOP (8) 3.00 mm x 3.00 mm
  1. For all available packages, see the orderable addendum at the end of the datasheet.

4 Revision History

Changes from A Revision (May 2013) to B Revision

  • Added Handling Ratings Table Go
  • Changed layout of National Data Sheet to TI format.Go