SLVSH27B April   2023  – December 2025 ESD451

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings—JEDEC Specification
    3. 5.3 ESD Ratings—IEC Specification
    4. 5.4 Recommended Operating Conditions
    5. 5.5 Thermal Information
    6. 5.6 Electrical Characteristics
    7. 5.7 Typical Characteristics
  7. 6Application and Implementation
    1. 6.1 Application Information
  8. 7Device and Documentation Support
    1. 7.1 Documentation Support
      1. 7.1.1 Related Documentation
    2. 7.2 Receiving Notification of Documentation Updates
    3. 7.3 Support Resources
    4. 7.4 Trademarks
    5. 7.5 Electrostatic Discharge Caution
    6. 7.6 Glossary
  9. 8Revision History
  10. 9Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DPL|2
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.6 Electrical Characteristics

At TA=25℃ (unless otherwise noted) (1)
PARAMETER PACKAGE TEST CONDITION MIN TYP MAX UNIT
VRWM Reverse stand-off voltage DPL & DPY package IIO <100nA, across operating temperature range -5.5 5.5 V
ILEAK Reverse leakage current VIO = 5.5V, IO to GND or GND to IO 5 50 nA
VBR Break-down voltage IIO = 1mA, IO to GND 7 8 9 V
VCLAMP Clamping voltage with TLP DPL Package IPP = 1A, TLP, IO to GND 7.6 V
IPP = 5A, TLP, IO to GND 8.2
IPP = 16A, TLP, IO to GND 10.4
IPP = 1A, TLP, GND to IO 7.6
IPP = 5A, TLP, GND to IO 8.2
IPP =16A, TLP, GND to IO 10.4
Clamping voltage with surge strike (3) IPP = 6A, tp = 8/20µs , IO to GND 9.5
IPP = 6A, tp = 8/20µs , GND to IO 9.5
RDYN Dynamic resistance (2) IO to GND 0.19 Ω
GND to IO 0.19
VCLAMP Clamping voltage with TLP DPY Package IPP = 1A, TLP, IO to GND 8.2 V
IPP = 5A, TLP, IO to GND 9.2
IPP = 16A, TLP, IO to GND 11.5
IPP = 1A, TLP, GND to IO 8.2
IPP = 5A, TLP, GND to IO 9.2
IPP =16A, TLP, GND to IO 11.5
Clamping voltage with surge strike (3) IPP = 6A, tp = 8/20µs , IO to GND 10
IPP = 6A, tp = 8/20µs , GND to IO 10
RDYN Dynamic resistance (2) IO to GND 0.24 Ω
GND to IO 0.24
CL Line capacitance DPL & DPY Package VIO = 0V;  ƒ = 1MHz, Vpp = 30mV, IO to GND or IO to GND 0.5 pF
(1) Typical parameters are measured at 25℃
(2) Extraction of RDYN using least squares fit of TLP characteristics between I = 10A and I = 20A
(3) Nonrepetitive current pulse 8 to 20µs exponentially decaying waveform according to IEC 61000-4-5