SLVSH10C November   2022  – December 2022 ESD751 , ESD761

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings—JEDEC Specification
    3. 6.3 ESD Ratings—IEC Specification
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Thermal Information
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics – ESD751
    8. 6.8 Typical Characteristics - ESD761
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 IEC 61000-4-5 Surge Protection
      2. 7.3.2 I/O Capacitance
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.2.2 Detailed Design Procedure

The ESD751 and ESD761 have a VRWM of ±24 V to protect the diode from being damaged during a short event that can occur when one of the USB-PD slower speed lines (CC1, CC2, SBU1, SBU2, D+, and D-) is shorted to VBUS. The bidirectional characteristic ensures both positive and negative polarity are protected. The low capacitance of 1.7 pF or less permits data rates up to 480 Mbps, which allows the designer to meet the requirements for the D+ and D- signals. These devices have an IPP = 2.8 A and 1.8 A (8/20 µs), respectively. The surge current capability of these devices is suitable for protecting the VBUS power rail.