SBOSAM3A July   2025  – August 2025 INA600

PRODMIX  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics - INA600A
    6. 6.6 Electrical Characteristics - INA600B
    7. 6.7 Electrical Characteristics - INA600F
    8. 6.8 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Gain Options and Resistors
        1. 7.3.1.1 Gain Error and Drift
      2. 7.3.2 Input Common-Mode Voltage Range
      3. 7.3.3 EMI Rejection
      4. 7.3.4 Typical Specifications and Distributions
      5. 7.3.5 Electrical Overstress
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Reference Pin
    2. 8.2 Typical Applications
      1. 8.2.1 48V Battery Monitoring Using Difference Amplifier
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
        1. 9.1.1.1 PSpice® for TI
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.7 Electrical Characteristics - INA600F

For VS = (V+) – (V–) = 2.7V to 40V (±1.35V to ±20V) at TA = 25°C, VREF = VS / 2,  G = 1/36, RL = 10kΩ connected to VS / 2, VCM = (VIN+ + VIN–) / 2 = VS / 2, VIN = (VIN+ – VIN–) = 0V and VOUT = VS / 2 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OFFSET
VOSO Offset voltage, RTO VS = 2.7V and 40V TA = 25°C ±0.4 ±2.0 mV
Offset voltage over T, RTO TA = –40°C to 125°C ±2.4 mV
Offset temp drift, RTO(1) TA = –40°C to 125°C ±0.8 ±4.0 µV/°C
PSRR Power-supply rejection ratio, RTO VS = 4V to 40V TA = 25°C   2.5 10 µV/V
PSRR Power-supply rejection ratio, RTO VS = 2.7V to 40V TA = 25°C   3 15 µV/V
INPUT IMPEDANCE
RIN-DM Differential Resistance VS = 4.5V to 40V 2400 kΩ 
RIN-CM Common-mode Resistance VS = 2.7V to 4.5V 610 kΩ 
VCM Input common-mode Range VS = 2.7V (V–) – 20 (V–) + 30 V
INPUT VOLTAGE
VCM Input common-mode Range VS = 4.5V to 40V (V–) – 40 (V–) + 85 V
CMRR DC Common-mode rejection ratio, RTO 2.7V ≤ VS < 4.5V VCM = (V–) – 20V to (V–) + 30V  109 dB
CMRR DC Common-mode rejection ratio, RTO 4.5V ≤ VS ≤ 40V VCM = (V–) – 40V to (V–) + 85V  109 132 dB
NOISE VOLTAGE
eNI Output voltage noise density VS = 40V f = 1kHz 70 nV/√Hz
f = 10kHz 85
ENI Output voltage noise fB = 0.1Hz to 10Hz 5.5 µVPP
fB = 0.1Hz to 150kHz 200 µVPP
GAIN
GE Gain error(2) VS = 2.7V, VREF = VMID VO = (V–) + 0.15V to (V+) – 0.15V ±0.003 ±0.05 %
Gain drift vs temperature(2) VS = 2.7V, VREF = VMID TA = –40°C to 125°C ±5 ppm/°C
OUTPUT
VOH Positive and negative rail headroom VS = 40V, VREF = VS, RL = 10kΩ to VMID 80 150 mV
VOL VS = 40V, VREF = VS, RL = 2kΩ to VMID 400 650 mV
CL Drive Load capacitance drive VO = 100mV step, Overshoot < 20% 200 pF
ZO Closed-loop output impedance f = 10kHz 35 Ω
ISC Short-circuit current VS = 40V ±50 mA
FREQUENCY RESPONSE
BW Bandwidth, –3dB VIN = 10mVpk-pk 300 kHz
THD + N Total harmonic distortion + noise VS = 40V, VREF = 2.5V, VO = 1VPP, RL = 100kΩ
ƒ = 1kHz, 80kHz measurement BW		 0.03 %
EMIRR Electro-magnetic interference rejection ratio f = 1GHz, VIN_EMIRR = 100mV, Differential Mode 130 dB
SR Slew rate VS = 40V, VO = 1V step 0.14 V/µs
tS Settling time To 0.1%, VS = 40V, VOUT_STEP = 1V, CL = 10pF 17 µs
tS Settling time To 0.01%, VS = 40V, VOUT_STEP = 1V, CL = 10pF 22 µs
Overload recovery VS = 2.7V, VIN– = 0V, VIN+ = 85V, and VREF = VS / 2 13 µs
REFERENCE INPUT
REF - VIN Input voltage range VS = 40V, VREF = VMID (V–)  (V+)  V
REF - G Reference gain to output 1 V/V
REF - GE Reference gain error(2) VS = 40V ±0.002 ±0.05 %
POWER SUPPLY
VS Power-supply voltage Dual-supply ±1.35 ±20 V
IQ Quiescent current VS = 2.7V 50 µA
IQ Quiescent current VS = 40V 65 90 µA
VS = 40V TA = –40°C to 125°C 95
(1) Offset drifts are uncorrelated. 
(2) Minimum and maximum values are specified by characterization.