SNVS430 Data sheet

SNVS430I May 2006 – March 2015 LM26001 , LM26001-Q1

PRODUCTION DATA.

Package Options

Mechanical Data (Package|Pins)

PWP|16
- MPDS371C

Thermal pad, mechanical data (Package|Pins)

PWP|16
- PPTD288A

Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings⁽¹⁾⁽²⁾

		MIN	MAX	UNIT
Voltages from the indicated pins to GND	VIN	–0.3	40	V
	SW⁽⁵⁾	–0.5	40	V
	VDD	–0.3	7	V
	VBIAS	–0.3	10	V
	FB	–0.3	6	V
	BOOT	SW-0.3	SW+7	V
	PGOOD	–0.3	7	V
	FREQ	–0.3	7	V
	SYNC	–0.3	7	V
	EN	–0.3	40	V
	FPWM	–0.3	y7	V
	SS	–0.3	7	V
	Power Dissipation⁽¹⁾⁽³⁾		2.6	W
Recommended Lead Temperature	Vapor Phase (70s)		215	°C
Recommended Lead Temperature	Infrared (15s)		220	°C
Storage temperature	T_stg	–65	150	°C

(1) The maximum allowable power dissipation is a function of the maximum junction temperature, TJ_MAX, the junction-to-ambient thermal resistance, θJA, and the ambient temperature, TA. The maximum allowable power dissipation at any ambient temperature is calculated using: PD_MAX = (TJ_MAX - TA) /θJA. The maximum power dissipation of 2.6W is determined using TA = 25°C, θJA = 38°C/W, and TJ_MAX = 125°C. The number stated here reflects the maximum power dissipation for the package and not the device.

(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications.

(3) For Device Power Dissipation, please refer to section 10.3.

6.2 ESD Ratings - LM26001

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾	± 2	kV
		Charged device model (CDM), per JEDEC specification JESD22-C101, all pins⁽²⁾	± 1	kV
		Machine model	± 200	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 ESD Ratings - LM26001-Q1

				VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per AEC Q100-002⁽¹⁾		± 2	kV
		Charged device model (CDM), per AEC Q100-011	Corner pins (1, 8, 9, and 16)	± 1
		Charged device model (CDM), per AEC Q100-011	Other pins	± 1
		Machine model		± 200	V

(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.4 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

	MIN	MAX	UNIT
Operating Junction Temp.	–40	125	°C
Supply Voltage⁽²⁾	3.0	38	V

6.5 Thermal Information

THERMAL METRIC⁽¹⁾		LM26001	UNIT
		PWP
		16 PINS
R_θJA	Junction-to-ambient thermal resistance	38.8	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	23.0
R_θJB	Junction-to-board thermal resistance	16.7
ψ_JT	Junction-to-top characterization parameter	0.6
ψ_JB	Junction-to-board characterization parameter	16.4
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	1.7

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.6 Electrical Characteristics

Unless otherwise stated, Vin=12 V. Minimum and Maximum limits are ensured through test, design, or statistical correlation. Typical values represent the most likely parametric norm at T_J = 25°C, and are provided for reference purposes only.⁽³⁾

	PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
SYSTEM
I_SD⁽⁴⁾	Shutdown Current	EN = 0 V		10.8		µA
I_SD⁽⁴⁾	Shutdown Current	EN = 0 V, –40°C ≤ T_J ≤ 125°C			20	µA
Iq_{_Sleep_VB}⁽⁴⁾	Quiescent Current	Sleep mode, VBIAS = 5 V		38		µA
Iq_{_Sleep_VB}⁽⁴⁾	Quiescent Current	Sleep mode, VBIAS = 5 V, –40°C ≤ T_J ≤ 125°C			70	µA
Iq_{_Sleep_VDD}	Quiescent Current	Sleep mode, VBIAS = GND		75		µA
Iq_{_Sleep_VDD}	Quiescent Current	Sleep mode, VBIAS = GND, –40°C ≤ T_J ≤ 125°C			125	µA
Iq_{_PWM_VB}	Quiescent Current	PWM mode, VBIAS = 5 V		150	230	µA
Iq_{_PWM_VDD}	Quiescent Current	PWM mode, VBIAS = GND		0.65	0.85	mA
I_{BIAS_Sleep}⁽⁴⁾	Bias Current	Sleep mode, VBIAS = 5 V		33		µA
I_{BIAS_Sleep}⁽⁴⁾	Bias Current	Sleep mode, VBIAS = 5 V, –40°C ≤ T_J ≤ 125°C			85	µA
I_{BIAS_PWM}	Bias Current	PWM mode, VBIAS = 5 V		0.5	0.70	mA
V_FB	Feedback Voltage	5 V < Vin < 38 V		1.234		V
V_FB	Feedback Voltage	5 V < Vin < 38 V, –40°C ≤ T_J ≤ 125°C	1.2155		1.2525	V
I_FB	FB Bias Current				±200	nA
ΔV_OUT/ΔV_IN	Vout line regulation	5 V < Vin < 38 V		0.001		%/V
ΔV_OUT/ΔI_OUT	Vout load regulation	0.8 V < V_COMP < 1.15 V		0.07%
VDD	VDD output voltage	7 V < Vin < 35 V, I_VDD= 0 mA to 5 mA		5.95		V
VDD	VDD output voltage	7 V < Vin < 35 V, I_VDD= 0 mA to 5 mA, –40°C ≤ T_J ≤ 125°C	5.50		6.50	V
I_{SS_Source}	Soft-start source current			2.2		µA
I_{SS_Source}	Soft-start source current	–40°C ≤ T_J ≤ 125°C	1.5		4.6	µA
V_{bias_th}	VBIAS On Voltage	Specified at I_BIAS = 92.5% of full value	2.64	2.9	3.07	V
SWITCHING
R_DS(ON)	Switch on Resistance	Isw = 1A		0.2		Ω
R_DS(ON)	Switch on Resistance	Isw = 1A, –40°C ≤ T_J ≤ 125°C	0.12		0.42	Ω
I_{sw_off}	Switch off state leakage current	Vin = 38 V, VSW = 0 V		0.002		µA
I_{sw_off}	Switch off state leakage current	Vin = 38 V, VSW = 0 V, –40°C ≤ T_J ≤ 125°C			5.0	µA
f_sw	Switching Frequency	RFREQ = 62k, 124k, 240k			±10%
V_FREQ	FREQ voltage			1.0		V
f_SW range	Switching Frequency range	–40°C ≤ T_J ≤ 125°C	150		500	kHz
V_SYNC	Sync pin threshold	SYNC rising		1.2		V
		SYNC rising, –40°C ≤ T_J ≤ 125°C			1.6
		SYNC falling		1.1
		SYNC falling, –40°C ≤ T_J ≤ 125°C	0.8
	Sync pin hysteresis			114		mV
I_SYNC	SYNC leakage current			6		nA
F_{SYNC_UP}	Upper frequency synchronization range	As compared to nominal f_SW, –40°C ≤ T_J ≤ 125°C			30%
F_{SYNC_DN}	Lower frequency synchronization range	As compared to nominal f_SW, –40°C ≤ T_J ≤ 125°C			–20%
T_OFFMIN	Minimum Off-time			365		ns
T_ONMIN	Minimum On-time			155		ns
TH_{SLEEP_HYS}	Sleep mode threshold hysteresis	VFB rising, % of TH_WAKE		101.2%
TH_WAKE	Wake up threshold	Measured at falling FB, COMP = 0.6 V		1.234		V
I_BOOT	BOOT pin leakage current	BOOT = 16 V, SW = 10 V		0.0006		µA
I_BOOT	BOOT pin leakage current	BOOT = 16 V, SW = 10 V, –40°C ≤ T_J ≤ 125°C			5.0	µA
PROTECTION
I_LIMPK	Peak Current Limit			2.5		A
I_LIMPK	Peak Current Limit	–40°C ≤ T_J ≤ 125°C	1.85		3.2	A
V_{FB_SC}	Short circuit frequency foldback threshold	Measured at FB falling		0.87		V
F_min_sc	Min Frequency in foldback	VFB < 0.3 V		71		kHz
V_{TH_PGOOD}	Power Good Threshold	Measured at FB, PGOOD rising		92%
	Power Good Threshold	Measured at FB, PGOOD rising, –40°C ≤ T_J ≤ 125°C	89%		95%
	PGOOD hysteresis		2%	7%	8%
I_{PGOOD_HI}	PGOOD leakage current	PGOOD = 5 V		0.2		nA
R_{DS_PGOOD}	PGOOD on resistance	PGOOD sink current = 500 µA		64		Ω
V_UVLO	Under-voltage Lock-Out Threshold	Vin falling , shutdown, VDD = VIN		2.9		V
		Vin falling , shutdown, VDD = VIN, –40°C ≤ T_J ≤ 125°C	2.60		3.20
		Vin rising, soft-start, VDD = VIN		3.9
		Vin rising, soft-start, VDD = VIN, –40°C ≤ T_J ≤ 125°C	3.60		4.20
TSD	Thermal Shutdown Threshold			160		°C
θ_JA	Thermal resistance	Power dissipation = 1W, 0 lfpm air flow		38		°C/W
LOGIC
Vth_EN	Enable Threshold voltage			1.2		V
	Enable Threshold voltage	–40°C ≤ T_J ≤ 125°C	0.8		1.4	V
	Enable hysteresis			120		mV
I_{EN_Source}	EN source current	EN = 0 V		4.5		µA
V_{TH_FPWM}	FPWM threshold			1.2		V
V_{TH_FPWM}	FPWM threshold	–40°C ≤ T_J ≤ 125°C	0.8		1.6	V
I_FPWM	FPWM leakage current	FPWM = 5 V		35		nA
EA
gm	Error amp trans-conductance			670		µmho
gm	Error amp trans-conductance	–40°C ≤ T_J ≤ 125°C	400		1000	µmho
I_COMP	COMP source current	VCOMP = 0.9 V		56		µA
I_COMP	COMP sink current	VCOMP = 0.9 V		56		µA
V_COMP	COMP pin voltage range		0.64		1.27	V

(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended Operating Conditions indicate conditions for which the device is intended to be functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the Electrical Characteristics.

(2) Below 4.0-V input, power dissipation may increase due to increased R_DS(ON). Therefore, a minimum input voltage of 4.0 V is required to operate continuously within specification. A minimum of 3.9 V (typical) is also required for startup.

(3) All room temperature limits are 100% production tested. All limits at temperature extremes are ensured through correlation using standard Statistical Quality Control (SQC) methods. All limits are used to calculate Average Outgoing Quality Level (AOQL).

(4) Iq and ISD specify the current into the VIN pin. IBIAS is the current into the VBIAS pin when the VBIAS voltage is greater than 3 V. All quiescent current specifications apply to non-switching operation.

(5) The absolute maximum specification applies to DC voltage. An extended negative voltage limit of -2V applies for a pulse of up to 1 µs, and –1 V for a pulse of up to 20 µs.